Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Shun Ito"'
Publikováno v:
Journal of Physics D: Applied Physics. 52:475103
The impact of dislocations on oxygen vacancies in un-doped SrTiO3 single crystal has been investigated by cathodoluminescence (CL). The dominated luminescence peak located at ~ 2.8 eV is originated from oxygen vacancies. Enhanced luminescence has bee
Publikováno v:
Surface and Interface Analysis. 39:528-532
Oxidation behavior of NiAl alloy at low temperatures was studied. A NiAl plate was oxidized by exposure to ambient atmosphere at room temperature, heated at 473 K in air, and heated at 773 K in air. The oxide formed on the NiAl surface was investigat
Publikováno v:
Materials Transactions. 43(2):111-115
The reductive coprecipitation with palladium has been reported for separation and pre-concentration of trace elements in high-purity metals. In order to evaluate the chemical forms of precipitate by this method, precipitates from acidic solution cont
Autor:
Mayumi B. Takeyama, Eiji Aoyagi, Masaru Sato, Hideaki Machida, Atsushi Noya, Hiroshi Sudoh, Shun Ito
Publikováno v:
Japanese Journal of Applied Physics. 50:05EA06
Thin vanadium nitride (VN x ) films were grown by atomic layer deposition using tetrakis(diethylamido)vanadium as a precursor and NH3 as a reactant. A growth rate of 0.1 nm/cycle without incubation time is obtained. Transmission electron microscopy r
Autor:
Kouichi Murakami, Shun Ito, Takashi Sekiguchi, Jun Chen, Naoki Fukata, T. Oshima, Noriyuki Uchida, Takao Tsurui, S. Matsushita
Publikováno v:
Applied physics letters. 90(15):153117
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Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitution
Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitution
Autor:
Tokushi Kizuka, Naoki Fukata, Naoya Okada, Shun Ito, Kouichi Murakami, T. Oshima, Takao Tsurui
Publikováno v:
Journal of applied physics. 100(2):024311
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The phonon confinement and self-limiting oxidation effects of silicon nanowires (SiNWs) synthesized by laser ablation were investigated. The size of SiNWs was controlled by the synthesis parameters during laser ablation and the s
The phonon confinement and self-limiting oxidation effects of silicon nanowires (SiNWs) synthesized by laser ablation were investigated. The size of SiNWs was controlled by the synthesis parameters during laser ablation and the s
Publikováno v:
Applied physics letters. 86(21):213112
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A gradual downshift and asymmetric broadening of the Si optical phonon peak were observed by Raman scattering measurements of continuously thermally oxidized silicon nanowires (SiNWs) synthesized by laser ablation. This downshift
A gradual downshift and asymmetric broadening of the Si optical phonon peak were observed by Raman scattering measurements of continuously thermally oxidized silicon nanowires (SiNWs) synthesized by laser ablation. This downshift