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pro vyhledávání: '"Tae-Gyu Ryu"'
Autor:
Hyun-Jin Shin, Sunil Babu Eadi, Seong-Hyun Kim, Tae-Gyu Ryu, Yeong-Jin An, Do-Woo Kim, Hi-Deok Lee, Hyuk-Min Kwon
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 679-686 (2022)
The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET). We demonstrated that the origin of LFN properties in pTFET c
Externí odkaz:
https://doaj.org/article/e32e4931dad04540bc33c6e6b0123f6c