Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Zhipeng Wu"'
Publikováno v:
Thin Solid Films. 641:38-42
Ferroelectric BaTiO 3 thin films were epitaxially grown on rutile-TiO 2 buffered GaAs(001) substrates by pulsed laser deposition system. The in-plane relationship of this heterostructure is 〈110〉BaTiO 3 //〈001〉TiO 2 //〈110〉GaAs and the ou
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:10625-10629
The flexible unipolar resistive switching characteristics of Au/Ni/HZO/Au devices on Polyethylene terephthalate substrates have been investigated for the RRAM applications. The devices demonstrated a bistable and reproducible unipolar RS behavior wit
Publikováno v:
Vacuum. 134:69-72
Three components of lead hafnate titanate (PbHf x Ti 1–x O 3 , PHT) thin films have been fabricated by pulsed laser deposition (PLD) on the Pt (111)/Ti/SiO 2 /Si (100) substrates. In order to reduce the mismatch between the thin films and substrate
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:1819-1823
Lead hafnate titanate (PHT) thin film was deposited by pulse laser deposition, characterized for the usage as a ferroelectric capacitor in view of Ferroelectric Random Access Memory (FeRAM) devices, and compared with a lead zirconate titanate (PZT) r
Publikováno v:
Ferroelectrics. 492:143-149
Lead Hafnate-Titanate, Pb(Hf0.3Ti0.7)O3 (PHT), films were fabricated by PLD on Al2O3 (0001) substrates with Pt or SrRuO3 (SRO) bottom electrodes, respectively. There is a certain amount of pyrochlore phase in PHT films on Pt/Al2O3. In contrast, the P
Autor:
Jun Zhu, Zhipeng Wu
Publikováno v:
Materials; Volume 10; Issue 3; Pages: 322
A metal–insulator–metal structure resistive switching device based on H0.5Z0.5O2 (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bist
Publikováno v:
physica status solidi (a). 215:1700396
An Au/Ni/Hf0.5Zr0.5O2/Au flexible memory device fabricated on a polyethylene terephthalate substrate was studied for flexible resistive random access memory applications. A typical bipolar resistive switching behavior was revealed with an OFF/ON rati
Publikováno v:
Functional Materials Letters. 10:1750036
Ferroelectric Pb(Zr[Formula: see text],Ti[Formula: see text]O3(PZT) thin film was grown on [Formula: see text]-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in s