Zobrazeno 1 - 10
of 17
pro vyhledávání: '"V. A. Shchukin"'
Autor:
V. A. Shchukin, Alexey E. Zhukov, Mikhail V. Maximov, A. V. Savelyev, Stefan Breuer, N. N. Ledentsov
Publikováno v:
Semiconductors. 53:1880-1883
The radiation power from active area into the planar waveguide has been studied theoretically in order to model VCSEL characteristics. Exact and simple quantitative connection between modal gain and spontaneous emission into planar waveguide has been
Autor:
Mikhail V. Maximov, V. A. Shchukin, Alexey E. Zhukov, A. V. Savelyev, Alexey M. Nadtochiy, N. N. Ledentsov
Publikováno v:
Semiconductors. 53:1876-1879
Spontaneous emission in a vertical cavity surface emitting laser (VCSEL) have been studied. It was estimated that a significant part of the spontaneous emission (~1/3) in a conventional VCSEL goes into a waveguide mode that propagates in the plane of
Publikováno v:
Semiconductors. 53:1712-1716
Uniform thin films of amorphous and microcrystalline silicon are obtained within the forevacuum range of pressures by the gas-jet plasma-chemical method with the activation of gas by an electron beam. The effect of the flow rate of the carrier gas ar
Autor:
V. G. Shchukin, V. N. Popov
Publikováno v:
Inorganic Materials: Applied Research. 10:616-621
Thermal processes of modifying the surface layer of a metal in a moving substrate with continuous induction heating of a rectangular substrate region by a high-frequency electromagnetic field have been studied using numerical simulation. The distribu
Publikováno v:
Semiconductors. 53:127-131
Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas,
Publikováno v:
Journal of Applied Mechanics and Technical Physics. 59:786-793
This paper presents the results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasmachemical method. A numerical model of gas mixtures flowing out of
Publikováno v:
Journal of Applied Mechanics and Technical Physics. 59:867-873
The results of temperature and density measurements of secondary electrons in a free jet of argon, activated in an electron beam plasma, carried out using a Langmuir double electrostatic probe. A cold plasmatron prototype with a primary beam energy o
Autor:
Mikhail V. Maximov, N. Yu. Gordeev, A. S. Payusov, Thibaud Denneulin, V. A. Shchukin, Alexey E. Zhukov, Yu. M. Shernyakov, Nikolay Cherkashin, Alexey M. Nadtochiy, M. M. Kulagina, N. N. Ledentsov
Publikováno v:
Fizika i tekhnika poluprovodnicov / Semiconductors
Fizika i tekhnika poluprovodnicov / Semiconductors, 2019, 53 (12), pp.1699-1704. ⟨10.1134/S1063782619160218⟩
Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2019, 53 (12), pp.1699-1704. ⟨10.1134/S1063782619160218⟩
Fizika i tekhnika poluprovodnicov / Semiconductors, 2019, 53 (12), pp.1699-1704. ⟨10.1134/S1063782619160218⟩
Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2019, 53 (12), pp.1699-1704. ⟨10.1134/S1063782619160218⟩
Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of Inx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ded925219822247581e36e06e32e69f4
https://hal.science/hal-02905168
https://hal.science/hal-02905168
Publikováno v:
Technical Physics. 63:888-893
It is shown that low-energy beams with a high efficiency in a wide range of beam currents can be obtained in electron sources with a hollow cathode in the forevacuum pressure range. By varying the geometrical parameters of the electrode system and el
Autor:
Thibaud Denneulin, L. Ya. Karachinsky, Yu. M. Shernyakov, Nikolay Cherkashin, M. M. Kulagina, V. A. Shchukin, A. S. Payusov, Alexey E. Zhukov, M. V. Maximov, N. Yu. Gordeev, N. N. Ledentsov
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2019, 155, pp.129-138. ⟨10.1016/j.sse.2019.03.009⟩
Solid-State Electronics, Elsevier, 2019, 155, pp.129-138. ⟨10.1016/j.sse.2019.03.009⟩
Solid-State Electronics, 2019, 155, pp.129-138. ⟨10.1016/j.sse.2019.03.009⟩
Solid-State Electronics, Elsevier, 2019, 155, pp.129-138. ⟨10.1016/j.sse.2019.03.009⟩
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and experimental results on injection lasing in the green–orange spectral range (558–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85634b64906f87167a163ef8f72a289f
https://hal.science/hal-02123602
https://hal.science/hal-02123602