Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Justin Norman"'
Autor:
Daehwan Jung, Lorenzo Rovere, Gaudenzio Meneghesso, Fabio Samparisi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick, Enrico Zanoni, Matteo Buffolo, Carlo De Santi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 26:1-8
This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechan
Autor:
Qiang Li, Noelle Collins, Yating Wan, Songtao Liu, Kei May Lau, Arthur C. Gossard, Ian MacFarlane, Justin Norman, Chen Shang, Mario Dumont, John E. Bowers
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 25:1-7
A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm 2 , a maximum operating temperature of 80 °C, and a maximum 3 dB bandwidth of 5.8 GHz was achieved for 1.3 μm InAs quantum dot lasers on patterned, on
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 25:1-9
The linewidth enhancement factor ( $\alpha _\mathrm{H}$ ) is an important parameter for semiconductor lasers. In this paper, we investigate, both theoretically and experimentally, the key parameters that affect $\alpha _\mathrm{H}$ of InAs/GaAs quant
Publikováno v:
Journal of Lightwave Technology. 36:4205-4210
We report for the first-time electro-optic phase and amplitude modulators in GaAs/AlGaAs epitaxial layers grown on misaligned silicon substrates containing germanium buffer layers. Epilayer has a npin doping profile and is equivalent to a pin diode.
Autor:
Bozhang Dong, Jianan Duan, John E. Bowers, Mitsuru Sugawara, Kenichi Nishi, Keizo Takemasa, Frédéric Grillot, Heming Huang, Justin Norman
Publikováno v:
Photonics Research
Photonics Research, OSA Publishing, 2021, 9 (8), pp.1550. ⟨10.1364/PRJ.421285⟩
Photonics Research, OSA Publishing, 2021, 9 (8), pp.1550. ⟨10.1364/PRJ.421285⟩
This work reports on a high-efficiency InAs/GaAs distributed feedback quantum dot laser. The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static, dynamic, and nonlinear intrinsic propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95f43ed0aa43937c778c9c25813e2325
https://hal.telecom-paris.fr/hal-03363299
https://hal.telecom-paris.fr/hal-03363299
Autor:
Clara J. Saraceno, S. Mansourzadeh, Martin Hoffmann, Hong Lu, Arthur C. Gossard, Justin Norman, Tim Vogel, U. Nandi, Sascha Preu
Publikováno v:
2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
We demonstrate a 1030 nm 520 fs-pulse-driven ErAs: InGaAs photoconductive receiver suitable for detecting 14 mW average THz power (~ 950 nJ pulse energy). To the knowledge of the authors, this is the highest detected pulsed THz power using photocondu
Publikováno v:
Journal of Lightwave Technology, vol 38, iss 8
JOURNAL OF LIGHTWAVE TECHNOLOGY, vol 38, iss 8
JOURNAL OF LIGHTWAVE TECHNOLOGY, vol 38, iss 8
AlGaAs bulk electro-optic Mach–Zehnder modulators with low ${V_\pi }$ are reported. Epilayer design is an npin , which is shown to be equivalent to a pin . Measured ${V_\pi }$ is 1 V for 1 cm long electrode and this result agrees very well with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d66aee0b569ca1e30bee08fb9fcd482f
https://escholarship.org/uc/item/5tt3g7cf
https://escholarship.org/uc/item/5tt3g7cf
Autor:
John E. Bowers, Justin Norman, Jianan Duan, Bozhang Dong, Frédéric Grillot, Heming Huang, Daehwan Jung
Publikováno v:
APL Photonics
APL Photonics, AIP Publishing LLC, 2020, 5 (1), pp.016103. ⟨10.1063/1.5120029⟩
APL Photonics, Vol 5, Iss 1, Pp 016103-016103-10 (2020)
APL Photonics, AIP Publishing LLC, 2020, 5 (1), pp.016103. ⟨10.1063/1.5120029⟩
APL Photonics, Vol 5, Iss 1, Pp 016103-016103-10 (2020)
This work investigates the performance of 1.3-μm quantum dot lasers epitaxially grown on silicon under optical feedback sensitivity with different temperature and doping profiles. Experiments show that these quantum dot lasers exhibit a very high de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2108d6e8a49aaa0e763bbfc7f04f4d9b
https://hal.telecom-paris.fr/hal-02437868
https://hal.telecom-paris.fr/hal-02437868
Autor:
Songtao Liu, Hon Ki Tsang, Justin Norman, John E. Bowers, Yeyu Tong, Mario Dumont, Arthur C. Gossard
Publikováno v:
OFC
Scopus-Elsevier
Scopus-Elsevier
A high-performance quantum dot semiconductor optical amplifier directly grown on a CMOS compatible Si substrate is demonstrated to improve the receiver sensitivity in a filterless 60-Gbit/s NRZ transmission system over temperatures from 20°C to 60°
Autor:
Yating Wan, Justin Norman, Robert W. Herrick, Catherine Jan, Arthur C. Gossard, Pari Patel, Katherine Turnlund, Zeyu Zhang, Daehwan Jung, Michael Kennedy, John E. Bowers
Publikováno v:
ACS Photonics. 5:1094-1100
Quantum dot lasers epitaxially grown on Si are promising for an efficient light source for silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm quantum dot lasers from off-cut Si to on-axis (001) Si substrates. Here, we