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pro vyhledávání: '"Justin Norman"'
Autor:
Jianan Duan, Justin Norman, Daehwan Jung, John E. Bowers, Heming Huang, Frédéric Grillot, Zeyu Zhang
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 112 (25), pp.251111. ⟨10.1063/1.5025879⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (25), pp.251111. ⟨10.1063/1.5025879⟩
International audience; This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5fd8e8af64615306539771e9260eb89
https://hal.telecom-paris.fr/hal-02305802
https://hal.telecom-paris.fr/hal-02305802
Publikováno v:
Applied Physics Letters. 113:061105
We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. Gain spectra and transparency points are measured for structurally identical lasers with va
Publikováno v:
Applied Physics Letters. 113:041108
Optical frequency comb direct generation on silicon by mode locked lasers (MLLs) is promising as it offers high wavelength channel counts and ultrashort pulses that will benefit future large-scale high capacity silicon photonic integrated circuits. H
Autor:
Yating Wan, John E. Bowers, Daehwan Jung, Bongki Shin, Justin Norman, Chen Shang, Arthur C. Gossard, Michael Kennedy
Publikováno v:
Applied Physics Letters. 111:122107
We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 ×