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pro vyhledávání: '"Justin Norman"'
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 25:1-9
The linewidth enhancement factor ( $\alpha _\mathrm{H}$ ) is an important parameter for semiconductor lasers. In this paper, we investigate, both theoretically and experimentally, the key parameters that affect $\alpha _\mathrm{H}$ of InAs/GaAs quant
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. The inhomogeneous broadening is extracted to be 10 meV. A p-doped quantum dot active region
Publikováno v:
2017 IEEE Photonics Conference (IPC).
After discussing the reliability issues limiting existing quantum well InP-based lasers, and the past reliability challenges of lasers grown on silicon substrates, we will show the recent reliability test results of a number of different types of qua