Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Weinan Lin"'
Autor:
Tieyang Zhao, Liang Liu, Jing Zhou, Qidong Xie, Shaohai Chen, Xinyu Shu, Jingsheng Chen, Weinan Lin, Chenghang Zhou
Publikováno v:
Science China Materials. 64:2029-2036
Antiferromagnetic (AFM) materials have attracted wide attention in spin-orbit torque (SOT)-based spintronic due to its abundant spin-dependent properties and unique advantage of immunity against external field perturbations. To act as the charge-to-s
Autor:
Xinyu Shu, Guowei Zhou, Xiaobing Yan, Amr Abdelsamie, Junling Wang, Rui Guo, Weinan Lin, Shaohai Chen, Jingsheng Chen, Lu You, Liang Liu
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Nature Communications
Nature Communications
Flexoelectricity induced by the strain gradient is attracting much attention due to its potential applications in electronic devices. Here, by combining a tunable flexoelectric effect and the ferroelectric photovoltaic effect, we demonstrate the cont
Autor:
Shaohai Chen, Weinan Lin, Ariando, Herng Yau Yoong, Han Wang, Ya-Xiong Zhou, Yimei Zhu, Jingsheng Chen, Zhi Shiuh Lim, Thirumalai Venkatesan, Rui Guo, John Wang, Xiangshui Miao, Xiaobing Yan, Gan Moog Chow, Zhuo-Rui Wang, Alexei Gruverman, Lijun Wu
Publikováno v:
ACS Applied Materials & Interfaces. 10:12862-12869
Brain-inspired computing is an emerging field, which intends to extend the capabilities of information technology beyond digital logic. The progress of the field relies on artificial synaptic devices as the building block for brainlike computing syst
Autor:
Jing Zhou, Weinan Lin, Xinyu Shu, Shaohai Chen, Jingsheng Chen, Ding Fu Shao, Ping Yang, Liang Liu, Evgeny Y. Tsymbal
Publikováno v:
Advanced Materials. 33:2007114
Spin-orbit torque (SOT), which arises from the spin-orbit coupling of conduction electrons, is believed to be the key route for developing low-power, high-speed, and nonvolatile memory devices. Despite the theoretical prediction of pronounced Berry p
Autor:
Thirumalai Venkatesan, John Wang, Zhidong Zhang, Jingsheng Chen, Qidong Xie, He Tian, Ping Yang, Weinan Lin, Chao Liu, Yingying Dai, Han Wang, Gan Moog Chow, Zhongran Liu, Liang Liu
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 32(14)
Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (
Autor:
Xiaobing Yan, Weinan Lin, Stephen J. Pennycook, Shikun He, Jingsheng Chen, Qing Qin, Qidong Xie, Zhi Shiuh Lim, Mengsha Li, Chenghang Zhou, Changjian Li, Liang Liu, W. M. Lü, Xinyu Shu, Jihang Yu
Publikováno v:
Nature nanotechnology. 14(10)
The electrical switching of magnetization through spin–orbit torque (SOT)1 holds promise for application in information technologies, such as low-power, non-volatile magnetic memory. Materials with strong spin–orbit coupling, such as heavy metals
Publikováno v:
Small. 12:802-809
Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanoro
Autor:
Changjian Li, Thirumalai Venkatesan, Kaiyang Zeng, Limei Zheng, Xiao Renshaw Wang, Wenwu Cao, Weinan Lin, W. X. Zhou, Kun Han, Weiming Lü, Juanxiu Xiao, Zhen Huang, Qiang Li, Jingsheng Chen, Ariando, Shengwei Zeng
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 29(24)
Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostru
Autor:
Mark B. H. Breese, Tiejun Zhou, Jianwei Chai, Weinan Lin, Shijie Wang, Xinyu Shu, Jingsheng Chen, Shaohai Chen, Xiaojiang Yu, Xiufeng Han, Qidong Xie, Zheng Zhang, Baishun Yang, Ming Yang, Hongxin Yang, Liang Liu
Publikováno v:
Advanced Materials. 31:1900776
2D transition metal dichalcogenides have attracted much attention in the field of spintronics due to their rich spin-dependent properties. The promise of highly compact and low-energy-consumption spin-orbit torque (SOT) devices motivates the search f
Autor:
Gan Moog Chow, Liang Liu, Qing Qin, Changjian Li, Qidong Xie, Xinyu Shu, Shikun He, Zhi Shiuh Lim, Jingsheng Chen, Weinan Lin
Publikováno v:
Advanced Materials. 31:1807008
Topological Hall effect (THE), appearing as bumps and/or dips in the Hall resistance curves, is considered as a hallmark of the skyrmion spin texture originated from the inversion symmetry breaking and spin-orbit interaction. Recently, Neel-type skyr