Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Yuuichi Takeuchi"'
Publikováno v:
Materials Science Forum. 897:43-46
In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperatu