Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Weinan Lin"'
Autor:
Weinan Lin, Jianli Cheng, Junfeng Ding, Kesong Yang, Fatih Dogan, Aurelien Manchon, Yangyang Li, Yingbang Yao, Tom Wu
Publikováno v:
ACS Applied Materials & Interfaces. 12:42982-42991
Two-dimensional electron gas (2DEG) at the interface between two insulating perovskite oxides has attracted much interest for both fundamental physics and potential applications. Here, we report the discovery of a new 2DEG formed at the interface bet
Autor:
Xinyu Shu, Jing Zhou, Weinan Lin, Soumya Sarkar, Han Wang, Shaohai Chen, Silvija Gradečak, Tieyang Zhao, Liang Liu, Chenghang Zhou, Jingsheng Chen, Qidong Xie
Publikováno v:
APL Materials, Vol 9, Iss 5, Pp 051114-051114-6 (2021)
Spin–orbit torque provides a highly efficient way to achieve current-induced magnetization switching, which relies on charge-to-spin conversion of the spin source layer. However, in the conventional heavy metal/ferromagnetic layer, the generated sp
Publikováno v:
Applied Physics Reviews. 7:011304
Brain-inspired neuromorphic computing has been intensively studied due to its potential to address the inherent energy and throughput limitations of conventional Von-Neumann based computing architecture. Memristors are ideal building blocks for artif
Publikováno v:
Journal of Physics D: Applied Physics. 52:24LT03
Magnetoelectric antiferromagnetic Cr2O3 is a promising candidate for antiferromagnetic spintronic applications to achieve electrical manipulation of the magnetic property, with the benefits of energy efficiency and a robustness to external disturbanc
Autor:
Jihang Yu, Rui Guo, Jing Zhou, Francis Poh, Danny Pak-Chum Shum, Shaohai Chen, Jingsheng Chen, Weinan Lin
Publikováno v:
Journal of Physics D: Applied Physics. 51:055006
The thermal tolerance and perpendicular magnetic anisotropy (PMA) of ferromagnetic alloy Co40Fe40C20 in the structure MgO/CoFeC/Pt (or Ta) were investigated and compared with the commonly used CoFeB alloy. It is found that the PMA of CoFeC with , whi
Autor:
H.Y. Peng, K. Li, Junfeng Ding, A. David, J.H. Hong, Yangyang Li, Weinan Lin, Tao Wu, L. Pu, J.C. Wu, Dong Kyu Cha
Publikováno v:
APL Materials
APL Materials, AIP Publishing 2013, 1
APL Materials, Vol 1, Iss 5, Pp 052106-052106-7 (2013)
APL Materials, AIP Publishing 2013, 1
APL Materials, Vol 1, Iss 5, Pp 052106-052106-7 (2013)
We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6440b237f5045f3a7aacabbb587a5f6
https://hal.archives-ouvertes.fr/hal-02162390
https://hal.archives-ouvertes.fr/hal-02162390