Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Martin Albrecht"'
Autor:
Ewa Grzanka, Artur Lachowski, Tobias Schulz, Robert Czernecki, Sławomir Kret, Lucja Marona, Julita Smalc-Koziorowska, Szymon Grzanka, Roman Hrytsak, Martin Albrecht, M. Grabowski, Henryk Turski, Toni Markurt, Mike Leszczynski
Publikováno v:
ACS Applied Materials & Interfaces. 13:7476-7484
In this work, we study the thermal degradation of In-rich InxGa1–xN quantum wells (QWs) and propose explanation of its origin based on the diffusion of metal vacancies. The structural transformatio...
Publikováno v:
IEEE Transactions on Magnetics. 56:1-5
We present a new method to realize a vector magnetometer that has been optically referenced to an external coordinate system. The vector magnetometer is made up of three Hall sensors attached to the orthogonal faces of a glass cube. When placed in a
Autor:
Leonardo Cancellara, Anna Mogilatenko, Sylvia Hagedorn, Dominik Jaeger, Sebastian Walde, Markus Weyers, Martin Albrecht
Publikováno v:
Journal of Crystal Growth. 512:142-146
In this work we investigated annealing of 350 nm and 450 nm thick sputtered (SP) AlN on sapphire in the temperature range from 1650 °C to 1730 °C. The most distinct decrease in the threading dislocation density (TDD), from initially 3 × 1010 cm−
The influence of composition of ZnO-Al2O3-SiO2 glass with TiO2 as nucleating agent on crystal phases, crystallite size, and appearance of prepared glass-ceramics has been investigated. Thirteen samples with different ratios of ZnO, Al2O3, and SiO2 we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08105b50c969ce62d5bc982b19f4edfc
https://www.bib.irb.hr/1090614
https://www.bib.irb.hr/1090614
Autor:
Martin Albrecht, Peter Storck, Tobias Schulz, L. Becker, M. H. Zoellner, Thomas Schroeder, Anna Marzegalli, L. Di Gaspare, G Schwalb, M. De Seta, Giovanni Capellini, Francesco Montalenti, F Rovaris
Publikováno v:
Journal of Applied Physics
Strain relaxed Si 1 − x Ge x buffer layers on Si(001) can be used as virtual substrates for the growth of both strained Si and strained SiGe, which are suitable materials for sub-7 nm CMOS devices due to their enhanced carrier mobility. For industr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::748630484d248f96cca0e41722023e49
https://hdl.handle.net/11590/375292
https://hdl.handle.net/11590/375292
Autor:
Mike Pietsch, Andreas Fiedler, Zbigniew Galazka, Matthias Bickermann, Robert Schewski, Steffen Ganschow, Martin Albrecht, Detlef Klimm, Klaus Irmscher, Rainer Bertram
Publikováno v:
Journal of Crystal Growth. 486:82-90
We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-
Autor:
Thomas Schroeder, Klaus Irmscher, Detlef Klimm, Albert Kwasniewski, Raimund Grueneberg, Matthias Bickermann, Martin Albrecht, Andreas Popp, Steffen Ganschow, Saud Bin Anooz, Andrea Dittmar, Robert Schewski, Isabelle Hanke, Mike Pietsch, Uta Juda, Zbigniew Galazka, Tobias Schulz
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 67:100511
In the course of development of transparent semiconducting oxides (TSOs) we compare the growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) TSOs, namely β-Ga2O3 and Ga-based spinels MgGa2O4, ZnGa2O4, and Zn1-xMgxGa
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:Q3040-Q3044
Autor:
Andrii Nikolenko, O. Belyaev, Vladimir Z. Turkevich, V. B. Kapustianyk, В. Tsykaniuk, Igor Dzięcielewski, Izabella Grzegory, J.L. Weyher, S. Porowski, Martin Albrecht, Marcin Sarzyński, B. Sadovyi, I. A. Petrusha, V. V. Strelchuk
Publikováno v:
Journal of Crystal Growth. 449:35-42
Experimental studies of diffusion of oxygen in bulk wurtzite-type GaN crystals grown by Halide Vapor Phase Epitaxy (HVPE) are reported. Oxygen concentration profiles were studied in as-grown GaN crystals and also after annealing of crystals at temper
Autor:
C. Wouters, Robert Schewski, Zbigniew Galazka, Martin Albrecht, Wolfram Miller, R. Grüneberg, Klaus Irmscher, Andreas Popp, Ta-Shun Chou, Andreas Fiedler, Jutta Schwarzkopf, S. Bin Anooz
Publikováno v:
Journal of Physics D: Applied Physics. 54:034003
The influence of chamber pressure and Si-doping on the growth rate, surface morphology and Hall mobility was investigated forβ-Ga2O3thin films homoepitaxially grown by metalorganic vapor phase epitaxy on Mg-dopedβ-Ga2O3(100) substrates with 4° mis