Zobrazeno 1 - 10
of 434 183
pro vyhledávání: '"01"'
Autor:
Yuanjie Lv, Xubo Song, Shixiong Liang, Shibing Long, Ming Liu, Wang Yuangang, Han Tingting, Tan Xin, Zhou Xingye, Shujun Cai, Zhihong Feng
Publikováno v:
IEEE Electron Device Letters. 41:131-134
In this letter, a high-performance ( $\overline {{2}} 01$ ) $\beta $ -Ga2O3 vertical Schottky Barrier Diode (SBD) with a thermally oxidized termination is reported. A novel edge termination at the Schottky contact edge is formed by using thermal oxid
Publikováno v:
Journal of Crystal Growth. 498:377-380
Thermal annealing at high temperatures of nonpolar (1 0 1 ¯ 0) m-plane AlN layers directly sputtered on m-plane sapphire was investigated. The crystallinity of the layers increased with increasing annealing temperature. The full-width at half maximu
Autor:
Jossue Montes, Xuanqi Huang, Hong Chen, Houqiang Fu, Tsung-Han Yang, Yuji Zhao, Izak Baranowski
Publikováno v:
IEEE Transactions on Electron Devices. 65:3507-3513
This paper reports a comprehensive study on the anisotropic electrical properties of vertical ( $\overline {\textsf {2}}01$ ) and (010) $\beta $ -Ga2O3 Schottky barrier diodes (SBDs). The devices were fabricated on single-crystal substrates grown by
Autor:
Wangying Xu, Shun Han, Youming Lu, Y. X. Zeng, Xiang He Chen, Xin K. Liu, Fang Jia, De Liang Zhu, Wenjun Liu, Pei Jiang Cao
Publikováno v:
Journal of Alloys and Compounds. 747:869-878
The effect of oxygen pressure on deposition orientation and the UV response characteristics of the β-Ga2O3 thin film by the Pulse Laser Deposition (PLD) method were studied. The β-Ga2O3 thin film deposited mainly along ( 2 ¯ 01 ) orientation at 0.
Autor:
Soohwan Jang, Fan Ren, Kimberly Beers, Stephen J. Pearton, Sunwoo Jung, Jiancheng Yang, Kwang Hyeon Baik, Akito Kuramata
Publikováno v:
Journal of Alloys and Compounds. 731:118-125
We report on the effect of β-Ga2O3 crystal orientation on wet etching and Ohmic contact formation. The photochemical etching rate in KOH solutions of ( 2 ¯ 01 ) oriented, n-type bulk single crystals grown by the edge-defined film-fed growth method
Autor:
Asanka Jayawardena, Tsvetanka Zheleva, Aivars J. Lelis, Christopher J. Klingshirn, Dallas T. Morisette, Rahul P. Ramamurthy, Lourdes Salamanca-Riba, Sarit Dhar
Publikováno v:
Journal of Applied Physics. 129:195705
Chemical and structural features of ( 2 ¯ 01) β-Ga 2O 3 interfaces with SiO 2 and Al 2O 3 gate oxides formed by low pressure chemical vapor deposition (SiO 2) and atomic layer deposition (Al 2O 3) were investigated by analytical electron microscopy
Publikováno v:
Journal of Applied Physics. 129:234101
The core structures of dislocations are crucial for understanding the plastic deformation mechanisms and the functional properties of materials. Here, we use the scanning transmission electron microscopy imaging techniques of high-resolution high ang
Autor:
Ting Zhi, Junjun Xue, Dunjun Chen, Jiangwei Chen, Baohua Zhang, Rong Zhang, Mei Ge, Qing Cai, Youdou Zheng, Lianhui Wang
Publikováno v:
Materials Letters. 208:19-22
X-ray diffraction (XRD) reciprocal space mappings (RSMs) and transmission electron microscopy (TEM) were applied to structurally characterize InGaN multi-quantum-well (MQW) alloys with a novel structure which were epi-grown successively on a rough th
Publikováno v:
Nanoscale Research Letters. 13
The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets r
Publikováno v:
Intermetallics. 128:106995
The interface structure of {2 2 ‾ 01} α2-Ti3Al deformation twins formed during tensile deformation of polysynthetically twinned (PST) TiAl single crystals at 900 °C has been studied systematically by aberration-corrected scanning transmission ele