Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Martin Albrecht"'
Autor:
Mike Pietsch, Andreas Fiedler, Zbigniew Galazka, Matthias Bickermann, Robert Schewski, Steffen Ganschow, Martin Albrecht, Detlef Klimm, Klaus Irmscher, Rainer Bertram
Publikováno v:
Journal of Crystal Growth. 486:82-90
We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-
Autor:
Thomas Schroeder, Klaus Irmscher, Detlef Klimm, Albert Kwasniewski, Raimund Grueneberg, Matthias Bickermann, Martin Albrecht, Andreas Popp, Steffen Ganschow, Saud Bin Anooz, Andrea Dittmar, Robert Schewski, Isabelle Hanke, Mike Pietsch, Uta Juda, Zbigniew Galazka, Tobias Schulz
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 67:100511
In the course of development of transparent semiconducting oxides (TSOs) we compare the growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) TSOs, namely β-Ga2O3 and Ga-based spinels MgGa2O4, ZnGa2O4, and Zn1-xMgxGa
Autor:
Saud Bin Anooz, Klaus Irmscher, Peter Petrik, Martin Schmidbauer, Jos E. Boschker, Julian Stoever, Martin Albrecht, Jutta Schwarzkopf
Publikováno v:
Applied Physics Letters. 116:182103
NbO2 is a promising candidate for resistive switching devices due to an insulator-metal transition above room temperature, which is related to a phase transition from a distorted rutile structure to an undistorted one. However, the electrical resisti
Autor:
Detlef Klimm, Albert Kwasniewski, Robert Schewski, Andreas Fiedler, Steffen Ganschow, Matthias Bickermann, Isabelle Schulze-Jonack, Klaus Irmscher, Mike Pietsch, Thomas Schröder, Martin Albrecht, Zbigniew Galazka
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022512-022512-12 (2019)
Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are
Autor:
Claudia Draxl, G. Wagner, Tobias Schulz, Martin Schmidbauer, Matthias Scheffler, S. Bin Anooz, Zbigniew Galazka, R. Grüneberg, C. Wouters, Robert Schewski, Klaus Irmscher, Andreas Popp, K. Lion, Martin Albrecht, Sergey V. Levchenko, Andreas Fiedler
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022515-022515-7 (2019)
APL Materials
APL Materials
We present a systematic study on the influence of the miscut orientation on structural and electronic properties in the homoepitaxial growth on off-oriented β-Ga2yO3 (100) substrates by metalorganic chemical vapour phase epitaxy. Layers grown on (10