Zobrazeno 1 - 5
of 5
pro vyhledávání: '"M. Hussain"'
Autor:
P. Shaikshavali, T. Venu Gopal, A. Lakshmi Narayana, Obili M. Hussain, G. Venkataprasad, P. Gopal, T. Madhusudana Reddy
Publikováno v:
Sensors and Actuators A: Physical. 293:87-100
The Fe3O4-Graphene (Fe3O4-Gr) nanocomposite has been synthesized by hydrothermal method and demonstrated its application towards electrochemical sensor and anode for high performance lithium ion batteries. The nanocomposite exhibited cubic face centr
Autor:
Nazek El-Atab, Aftab M. Hussain, Wedyan Babatain, Muhammad Mustafa Hussain, Rishabh Bhooshan Mishra
Publikováno v:
NEMS
Web of Science
Web of Science
In this work, a large area, low cost and flexible polymer/paper-based double touch mode capacitive pressure sensor is demonstrated. Garage fabrication processes are used which only require cutting, taping and assembly of aluminum (Al) coated polyimid
Autor:
Muhammad Mustafa Hussain, Sarah M. Alsharif, Amir Hanna, Hesham Omran, Aftab M. Hussain, Khaled N. Salama
Publikováno v:
IEEE Transactions on Electron Devices. 63:1550-1556
We report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50
Autor:
Hesham Omran, Aftab M. Hussain, Sarah M. Alsharif, Khaled N. Salama, Amir Hanna, Muhammad Mustafa Hussain
Publikováno v:
IEEE Electron Device Letters. 37:193-196
High-performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for the Internet of Everything applications. While semiconducting oxides, such as zinc oxide (Z
Autor:
Muhammad Mustafa Hussain, G. A. Torres Sevilla, Abdurrahman Gumus, Melvin E. Cruz, Amani S. Almuslem, Aftab M. Hussain
Publikováno v:
Applied Physics Letters. 108:094102
Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etc