Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Xiaoli Tan"'
Publikováno v:
Acta Materialia. 184:41-49
Antiferroelectrics (AFEs) have a great potential for modern electronic devices by virtue of the large strain during the antiferroelectric-to-ferroelectric (AFE-FE) phase transition under external electric fields. Although the fascinating macroscopic
Publikováno v:
Journal of the European Ceramic Society. 39:4735-4742
Enhancing the efficiency in energy storage capacitors minimizes energy dissipation and improves device durability. A new efficiency-enhancement strategy for antiferroelectric ceramics, imposing relaxor characteristics through forming solid solutions
Publikováno v:
ACS Applied Materials & Interfaces. 11:40726-40733
Dielectric breakdown of oxides is a main limiting factor for improvement of the performance of electronic devices. Present understanding suggests that defects produced by intense voltage accumulate in the oxide to form a percolation path connecting t
Autor:
Chiu C. Tang, Melvin Vopson, I. Unzueta, Victor Kuncser, Esmaeil Namvar, Fernando Plazaola, Xiaoli Tan, Stephen Thompson, Michal Belusky
Publikováno v:
Vopson, M, Tan, X, Namvar, E, Belusky, M, Thompson, S, Kuncser, V, Plazaola, F, Unzueta, I & Tang, C 2019, ' Sub-lattice polarization states in anti-ferroelectrics and their relaxation process ', Current Applied Physics, vol. 19, no. 5, pp. 651-656 . https://doi.org/10.1016/j.cap.2019.03.009
We report studies of quasi-remanent polarization states in Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 (PNZST) anti-ferroelectric ceramics and investigation of their relaxation effects using unique in-situ electrically activated time-resolved Synchr
Autor:
Ian M. Reaney, Xiaoli Tan, Di Zhou, Antonio Feteira, Zhongming Fan, Amir Khesro, Shunsuke Murakami, Quanliang Zhao, Dawei Wang
Publikováno v:
Journal of Materials Chemistry A. 6:4133-4144
Lead-free ceramics with high recoverable energy density (Wrec) and energy storage efficiency (η) are attractive for advanced pulsed power capacitors to enable greater miniaturization and integration. In this work, dense bismuth ferrite (BF)-based, l
Autor:
Melvin Vopson, Xiaoli Tan
Publikováno v:
IEEE Electron Device Letters. 37:1551-1554
Ferroelectric random access memory (FRAM) is a two-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here, we propose a novel non-volatile me