Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jinyong, Kim"'
Autor:
Jung Yeon Won, Jinyong Kim, Tae-Gon Kim, Sungho Lee, Jin-Bum Kim, Seongpyo Hong, Hyung-Ik Lee, Hyoungsub Kim, Ilgyou Shin, Hoo-Jeong Lee, Seongheum Choi, Ki-Hyun Hwang, Yihwan Kim, Taejin Park
Publikováno v:
Journal of Alloys and Compounds. 788:1013-1020
Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically n
Publikováno v:
International Journal of Hydrogen Energy. 44:4304-4316
Commercial direct flame fuel cells (DFFC) need larger cell surface area for higher power output. In such cases, multi-dimensional effects play significant roles on cell performances. In this work, a two-dimensional numerical model is developed to ill
Autor:
Yun Jae Lee, Bosung Kim, Hyoungsub Kim, Hyung-Ik Lee, Joong Jung Kim, Seongpyo Hong, Younheum Jung, Taejin Park, Jinyong Kim, Sungho Lee, Jung Yeon Won, Eunha Lee, Yihwan Kim, Cheol-Woong Yang, Seongheum Choi, Ki-Hyun Hwang, Jin-Bum Kim
Publikováno v:
Journal of Alloys and Compounds. 771:124-130
Pt-doped NiSi‒NiSi2 thin films in a uniform lamellar structure with a periodicity on the scale of a few tens of nanometers were formed on Si(001) substrates using a continuous laser scanning process. When the Pt-doped NiSi film was melted at high t
Autor:
Hyoungsub Kim, Jin-Bum Kim, Yoo Jeong-Ho, Ilgyou Shin, Jung-Hwa Kim, Yihwan Kim, Seongheum Choi, Ki-Hyun Hwang, Jinyong Kim, Hyangsook Lee, Taejin Park, Eunha Lee, Seok-Hoon Kim
Publikováno v:
Microelectronic Engineering. 205:14-19
The objective of this study was to determine detailed microstructure of a Ni1–xPtxSi film formed via a melting/quenching process using high temperature laser annealing on a Si(001) substrate. The orthorhombic Ni1–xPtxSi film was found to be able
Autor:
Xiaohui Wang, Qian Cheng Zhao, Hui Ling Gong, Hui Zhang, Bingcheng Luo, Longtu Li, Jinyong Kim
Publikováno v:
Solid State Phenomena. 281:71-77
Sand-milling machine was firstly utilized to crush and disperse the raw materials. A homogenous and well-dispersed mixture of TiO2 and BaCO3 (3, an innovative two-step calcination method, which includes solid state reaction process between reactants
Autor:
Byeong-Seon An, Seongheum Choi, Hyangsook Lee, Jin-Bum Kim, Hyun-Jung Lee, Jinyong Kim, Cho-Eun Lee, Cheol-Woong Yang, Hyoungsub Kim
Publikováno v:
Journal of Alloys and Compounds. 727:728-734
In pursuit of a potential low-resistive contact structure, ErSi2-x was grown on an excessively P-doped and highly strained epitaxial Si layer (Si:P with a P concentration of ∼2.8 at%), and its microstructure was investigated in comparison to that g
Autor:
Byeong Kwon Ju, Kunnyun Kim, Yeon Hwa Kwak, Jinyong Kim, Won-Hyo Kim, Kwang Bum Park, Seawhan Choi
Publikováno v:
Sensors and Actuators A: Physical. 264:298-307
A capacitive-type touch sensor for detecting the touch position and touch load, simultaneously, is designed and manufactured using transparent electrode material. Generally, a touch sensor senses only the touch position. However, as the touch sensor
Publikováno v:
Journal of Power Sources. 489:229496
A numerical model is developed to study cell venting, internal pressure, and gas-phase dynamics behavior of 18650 Li-ion cells undergoing thermal runaway. A k-ϵ Reynolds-Averaged Navier-Stokes (RANS) model is adopted to describe the turbulent flow o
Autor:
Hyangsook Lee, Taeho Cha, Hyoungsub Kim, Hyung-Ik Lee, Seongheum Choi, Jinyong Kim, Chul-Sung Kim, Sun-jung Kim, Yihwan Kim, Jin-Bum Kim, Eunha Lee, Jung Yeon Won, Kee-Won Kwon, Sang-Jin Hyun, Taejin Park, Dong-Suk Shin
Publikováno v:
ACS Applied Materials & Interfaces. 9:566-572
To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich sil
Autor:
Choon Hwan Kim, Hyoungsub Kim, Seongheum Choi, Yunseok Kim, Eunjung Ko, Jinyong Kim, Minhyeong Lee, Sungkil Cho, Dae Hong Ko, Juyun Choi, Il Cheol Rho
Publikováno v:
Microelectronic Engineering. 165:1-5
As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temper