Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Bastien Bonef"'
Autor:
Abdullah S. Almogbel, Feng Wu, Bastien Bonef, James S. Speck, Michael Iza, Shuji Nakamura, Burhan K. Saifaddin, Steven P. DenBaars, Christian J. Zollner
Publikováno v:
ACS Photonics. 7:554-561
The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN LEDs is limited by poor...
Autor:
Benjamin Damilano, Bastien Bonef, E. Di Russo, David Cooper, L. Rigutti, Guy Feuillet, A. Mavel, V. Fan Arcara, Névine Rochat, Stéphane Vézian, Adeline Grenier, Marc Veillerot, Ioanna Dimkou, Jean-Yves Duboz, Eva Monroy
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Nanotechnology, Institute of Physics, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
International audience; A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b05f89a76ab794dd9436f2ebf8e018e7
https://hal-cnrs.archives-ouvertes.fr/hal-03411327
https://hal-cnrs.archives-ouvertes.fr/hal-03411327
Autor:
Bastien Bonef, Matthew S. Wong, Joown Choi, Feng Wu, Jie Song, James S. Speck, Michel Khoury, Panpan Li, Tom Mates, Steven P. DenBaars, Shuji Nakamura, Haojun Zhang, Hongjian Li
Publikováno v:
Optics express. 28(12)
We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy observatio
Autor:
Bastien Bonef, Daniel Cohen, James S. Speck, Philippe De Mierry, Matthew S. Wong, Feng Wu, Shuji Nakamura, Philippe Vennéguès, Haojun Zhang, Michel Khoury, Steven P. DenBaars, Hongjian Li
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2019, ⟨10.1021/acsami.9b17525⟩
ACS Applied Materials & Interfaces, 2019, ⟨10.1021/acsami.9b17525⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2019, ⟨10.1021/acsami.9b17525⟩
ACS Applied Materials & Interfaces, 2019, ⟨10.1021/acsami.9b17525⟩
The last two decades have shown an increasing need for GaN-based laser diodes (LDs), which are currently only grown on bulk GaN substrates, which remain to date very expensive and/or only available in small sizes. The ever growing laser market will e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd3a9e2d4d8d4e13080705ed61331aa7
https://hal.archives-ouvertes.fr/hal-02405108
https://hal.archives-ouvertes.fr/hal-02405108
Autor:
G. Da Costa, Nikolay Cherkashin, Didier Blavette, A. V. Sakharov, Bastien Bonef, E. Di Russo, Andrey E. Nikolaev, A. F. Tsatsulnikov, Jonathan Houard, L. Rigutti, Ivan Blum, M. Korytov
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2019, 126 (12), pp.124307. ⟨10.1063/1.5113799⟩
Journal of Applied Physics, 2019, 126 (12), pp.124307. ⟨10.1063/1.5113799⟩
Journal of Applied Physics, American Institute of Physics, 2019, 126 (12), pp.124307. ⟨10.1063/1.5113799⟩
Journal of Applied Physics, 2019, 126 (12), pp.124307. ⟨10.1063/1.5113799⟩
International audience; Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron holography (HR-DFEH) were performed to investigate the composition of a polar [0001] GaN/AlxGa1 − xN/InyGa1 − yN light emitting diode. In p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08bf1bb67a9e18475bb51aa1caba1f84
https://hal.archives-ouvertes.fr/hal-02298940
https://hal.archives-ouvertes.fr/hal-02298940
Autor:
Haojun Zhang, Philippe De Mierry, YiChao Chow, Aidan A. Taylor, Zainuriah Hassan, Bastien Bonef, Shuji Nakamura, Steven P. DenBaars, Jared Kearns, Matthew S. Wong, Hongjian Li, Panpan Li, Michel Khoury
Publikováno v:
Optics Express
Optics Express, Optical Society of America, 2019, 27 (17), pp.24154. ⟨10.1364/OE.27.024154⟩
Optics Express, Optical Society of America-OSA Publishing, 2019, ⟨10.1364/OE.27.024154⟩
Optics Express, Optical Society of America-OSA Publishing, 2019, 27 (17), pp.24154. ⟨10.1364/OE.27.024154⟩
Optics Express, Optical Society of America, 2019, 27 (17), pp.24154. ⟨10.1364/OE.27.024154⟩
Optics Express, Optical Society of America-OSA Publishing, 2019, ⟨10.1364/OE.27.024154⟩
Optics Express, Optical Society of America-OSA Publishing, 2019, 27 (17), pp.24154. ⟨10.1364/OE.27.024154⟩
International audience; We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm 2 to 100 × 100 µm 2 , grown on a low defect density and large area (11-22) GaN template on
Autor:
Junjie Kang, Hongjian Li, Steven P. DenBaars, Michel Khoury, Panpan Li, Bastien Bonef, Shuji Nakamura, Guillaume Lheureux
Publikováno v:
Superlattices and Microstructures. 113:684-689
We investigate carrier localization effect and recombination dynamics of 530 nm InGaN green light-emitting diodes (LEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) methods. Two distinct emission pe
Publikováno v:
Journal of Crystal Growth. 454:164-172
InAlN grown by plasma-assisted molecular beam epitaxy often contains a honeycomb microstructure. The honeycomb microstructure consists of 5–10 nm diameter aluminum-rich regions which are surrounded by indium-rich regions. Layers without this micros
Publikováno v:
Journal of Crystal Growth. 546:125738
Growth of efficient III-N based light emitting devices by plasma assisted molecular beam epitaxy has been elusive, even though the technique has attractive advantages in comparison to metal organic chemical vapor deposition. Modern high-flux radio fr
Autor:
J-M Zuo, Pierre-Henri Jouneau, Benedikt Haas, Régis André, J-L. Rouvière, Bastien Bonef, Adeline Grenier, Catherine Bougerol
Publikováno v:
Journal of Microscopy. 262:178-182
The atomic scale analysis of a ZnTe/CdSe superlattice grown by molecular beam epitaxy is reported using atom probe tomography and strain measurements from high-resolution scanning transmission electron microscopy images. CdTe interfaces were grown by