Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Juan A. Delgado-Notario"'
Autor:
Jaime Calvo-Gallego, Juan A. Delgado-Notario, Jesús E. Velázquez-Pérez, Miguel Ferrando-Bataller, Kristel Fobelets, Abdelaziz El Moussaouy, Yahya M. Meziani
Publikováno v:
Sensors, Vol 21, Iss 3, p 688 (2021)
This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30
Externí odkaz:
https://doaj.org/article/3ff8ee18cdef4a04a92b1c0100665ef9
Autor:
Juan A. Delgado-Notario, Jaime Calvo-Gallego, Jesús E. Velázquez-Pérez, Miguel Ferrando-Bataller, Kristel Fobelets, Yahya M. Meziani
Publikováno v:
Applied Sciences, Vol 10, Iss 17, p 5959 (2020)
Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub
Externí odkaz:
https://doaj.org/article/413ada0e09f747eebb002692633cba55
Publikováno v:
Sensors, Vol 18, Iss 2, p 543 (2018)
Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate straine
Externí odkaz:
https://doaj.org/article/ee82aabc73ed4d8da2f803ce47f864f7
Autor:
Daniel Vaquero, Vito Clericò, Michael Schmitz, Juan Antonio Delgado-Notario, Adrian Martín-Ramos, Juan Salvador-Sánchez, Claudius S. A. Müller, Km Rubi, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer, Enrique Diez, Mikhail I. Katsnelson, Uli Zeitler, Steffen Wiedmann, Sergio Pezzini
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-6 (2023)
Monolayer graphene can support the quantum Hall effect up to room temperature. Here, the authors provide evidence that graphene encapsulated in hexagonal boron nitride realizes a novel transport regime where dissipation in the quantum Hall phase is m
Externí odkaz:
https://doaj.org/article/29cfa8d1b37446219e59bb639365a944