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Autor:
Becker, Lucas, Storck, Peter, Schulz, Tobias, Zoellner, Marvin H., Di Gaspare, Luciana, Rovaris, Fabrizio, Marzegalli, Anna, Montalenti, Francesco, Capellini, Giovanni, Schwalb, Georg, Schroeder, Thomas, Albrecht, Martin
Strain relaxedSi1−𝑥Ge𝑥 buffer layers on Si(001) can be used as virtual substrates for the growth of both strained Si and strained SiGe, which are suitable materials for sub-7 nm CMOS devices due to their enhanced carrier mobility. For indus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::04eb900dc4fb197c6bad66398aa74273
https://zenodo.org/record/6241792
https://zenodo.org/record/6241792