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pro vyhledávání: '"Zhang, Jiyue"'
Autor:
Cao H; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China., Hu T; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China., Zhang J; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China., Zhao D; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China., Chen Y; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China.; Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China., Wang X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China., Yang J; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China., Zhang Y; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China., Tang X; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, P. R. China., Bai W; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China., Shen H; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China., Wang J; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China.; Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China.; Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, P. R. China., Chu J; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China.; Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China.
Publikováno v:
Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Jun; Vol. 11 (22), pp. e2400018. Date of Electronic Publication: 2024 Mar 19.