Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
SID Symposium Digest of Technical Papers. 45:5-8
We developed new magnetron sputtering equipment called rotation magnet sputtering (RMS), where multiple moving plasma loops are exited on the planar target surface, obtaining high target utilization. The moving plasma loops also worked efficiently to
Publikováno v:
Journal of the Society for Information Display. 21:517-523
Heavier noble gases Kr and Xe instead of the lighter Ar during the magnetron-sputtering deposition of amorphous indium–gallium–zinc oxide films are introduced in fabricating their thin-film transistors (TFTs). Heavy noble gases can reduce damage
Autor:
Tadahiro Ohmi, Tsukuru Katsuyama, Isao Makabe, Shigetoshi Sugawa, Yasuyuki Shirai, Kenichi Nakamura, Yukihiro Tsuji, Akinobu Teramoto, Ken Nakata, Tadashi Watanabe
Publikováno v:
physica status solidi c. 10:1557-1560
In order to improve reliability and yield of gallium nitride (GaN) devices, we have developed the formation of an ultra-clean GaN surface and an interface of a passivation layer. The residue or termination materials on the GaN surface were analyzed a
Publikováno v:
SID Symposium Digest of Technical Papers. 44:727-730
Heavier noble gases of Kr and Xe instead of the lighter Ar during the magnetron-sputtering deposition of amorphous indium—gallium-zinc oxide films are introduced in fabricating their thin-film transistors. Higher field effect mobility can be obtain
Publikováno v:
SID Symposium Digest of Technical Papers. 43:760-763
We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a-InGaZnOx films. Comparison of the spatial dis
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1251-1253
We have investigated the annealing behavior of a-IGZO4 and found out that crystallization takes place at relatively low temperature of around 400°C when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O2/Ar, on the ot
Autor:
Yuichiro Yamashita, Masahiro Konda, Tadashi Shibata, Ning Mei Yu, Tatsuo Morimoto, Tadahiro Ohmi, Akira Nakada, Tsutomu Nakai, Koji Kotani
Publikováno v:
Systems and Computers in Japan. 30:52-62
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 82:33-41
Autor:
Masayuki Toda, Tadahiro Ohmi, Makoto Miyashita, Kazunari Sakai, Hideyuki Murata, Yasushi Tomita
Publikováno v:
AIChE Journal. 45:681-690
The mass-transfer mechanisms of water vapor in hollow-fiber membrane modules used to remove gases from water were studied experimentally and theoretically. Hollow-fiber modules for degassing are widely used in various industries, including ultrapure
Publikováno v:
ChemInform. 23
Fomnation of giant-grain copper thin films on SiO 2 by a low-kinetic energy particle process followed by thermal annealing has been investigated. When Cu films are grown on SiO 2 by the process under a sufficient amount of energy deposition, they exh