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Autor:
Sammynaiken, R., Naftel, S. J, Sham, T. K., Cheah, K. W., Averboukh, B., Huber, Rupert, Shen, Y. R., Qin, G. G., Ma, Z. C., Zong, W. H.
We report an x-ray absorption fine structure study at the Si K and L3,2 edges of a series of Si/SiO2 superlattices (SL). The SL system comprises four periods of elemental silicon with a spacing of 1, 1.4, 2.2, and 2.6 nm sandwiched by a 1.5 nm silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::649e1728375cc4989119a4b58ad52fc7