Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Saafie Salleh"'
Publikováno v:
Key Engineering Materials. 706:51-54
Neutron bombardment on semiconductor material causes defects, one such primary physical effect is the formation of displacement defects within the crystal lattice structure, and such defects effectively decrease the mean free path and thus shorten th
Autor:
Afishah Alias, Saafie Salleh, Azmizam Manie Mani, Farah Lyana Shain, Lam Mui Li, Umar Faruk Shuib, Khairul Anuar Mohamad
Publikováno v:
Advanced Materials Research. 1119:29-33
This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performe
Publikováno v:
Advanced Materials Research. 1107:678-683
Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powe
Publikováno v:
Advanced Materials Research. :856-861
Zinc sulfide (ZnS) thin films as the waveguide medium have been deposited onto oxidized silicon wafer substrates at cold temperature (Tcold = –50oC) and ambient temperature (Tambient = 25oC) by thermal evaporation technique. The surface morphology
Publikováno v:
Advanced Materials Research. 216:332-336
Zinc sulfide (ZnS) waveguides with the thickness of 0.5 μm have been deposited onto oxidized silicon wafer substrates at cold temperature (Tcold = –50°C) and ambient temperature (Tambient = 25°C) by thermal evaporation technique. The propagation