Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Liang-Yu Chen"'
Publikováno v:
Materials Science Forum. 963:813-817
Operational testing of prototopye 4H-SiC JFET ICs across an unrivaled ambient temperature span in excess of 1000 °C, from-190 °C to +812 °C, has been demonstrated without any change/adjustment of input signal levels or power supply voltages. This
Autor:
David J. Spry, Carl W. Chang, Glenn M. Beheim, Dorothy Lukco, Norman F. Prokop, Michael J. Krasowski, Liang-Yu Chen, Philip G. Neudeck
Publikováno v:
Materials Science Forum. 924:949-952
This report describes more than 5000 hours of successful 500 °C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology
Autor:
David J. Spry, Liang-Yu Chen, Glenn M. Beheim, Philip G. Neudeck, Dorothy Lukco, Carl W. Chang
Publikováno v:
Materials Science Forum. 897:567-570
Prolonged 500 °C to 700 °C electrical testing data from 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) are combined with post-testing microscopic studies in order to gain more comprehensive understanding of the durability
Autor:
David J. Spry, Liang-Yu Chen, Carl W. Chang, Laura J. Evans, Dorothy Lukco, Glenn M. Beheim, Philip G. Neudeck
Publikováno v:
Materials Science Forum. 858:1112-1116
The fabrication and prolonged 500 °C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some ci
Autor:
Glenn M. Beheim, Norman F. Prokop, Michael J. Krasowski, Dorothy Lukco, David J. Spry, Liang-Yu Chen, Philip G. Neudeck, Carl W. Chang
Publikováno v:
Materials Science Forum. 858:908-912
Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC
Publikováno v:
Materials Science Forum. :781-784
This work reports DC electrical characterization of a 76 mm diameter 4H-SiC JFET test wafer fabricated as part of NASA’s on-going efforts to realize medium-scale ICs with prolonged and stable circuit operation at temperatures as high as 500 °C. In
Publikováno v:
Advanced Materials Research. 939:342-348
Developing the interior structures of polymer films is essential for creating novel functions of such films. This study investigates the effects of extension parameters and processing procedures on the super-structure of a polypropylene (PP) film. An
Publikováno v:
Advanced Materials Research. 796:554-557
She's traditional costumes are both tangible and intangible cultural heritage, which do not only have a high aesthetic value, but also embody She's enduring beliefs and characters. However, with the economic development, social progress, especially t
Autor:
Jose M. Gonzalez, Benjamin Ward, Azlin Biaggi-Labiosa, Michael A. Artale, Liang-Yu Chen, Christopher L. Hampton, Dorothy Lukco, Jennifer C. Xu, Peter S. Lampard, Gary W. Hunter
Publikováno v:
Materials Science Forum. :1191-1194
This paper describes efforts towards the transition of existing high temperature hydrogen and hydrocarbon Schottky diode sensor elements to packaged sensor structures that can be integrated into a testing system. Sensor modifications and the technica
Autor:
Liang Yu Chen, R. Wayne Johnson, Philip G. Neudeck, Glenn M. Beheim, David J. Spry, Roger D. Meredith, Gary W. Hunter
Publikováno v:
Materials Science Forum. :1033-1036
Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercia