Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Autor:
Tadahiro Ohmi, Tomoyuki Suwa, Shigetoshi Sugawa, Genya Fujita, Hiroto Takahashi, Akinobu Teramoto, Yuki Kumagai
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
The gate leakage current which influences the charge hold time of flash memories is characterized as very localized in tunnel oxide area. And the leakage current value is relatively low as the quantity of the current. In conventional test-element-gro
Autor:
Tadahiro Ohmi, Ichirou Takahashi, Tetsuya Goto, Hiroyuki Sakurai, Akinobu Teramoto, Masaki Hirayama, Atsuhiko Yamada, Shigetoshi Sugawa
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials.