Zobrazeno 1 - 10
of 110
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Kenichi Nakamura, Tadahiro Ohmi, Yasuyuki Shirai, Fuminobu Imaizumi, Tomoyuki Suwa, Shigetoshi Sugawa, Akinobu Teramoto, Kenji Nagao
Publikováno v:
ECS Transactions. 66:11-21
I. INTRODUCSION Gallium nitride (GaN) -based materials are used for HEMTs, MESFETs, and MOSFETs. GaN-based transistors operate under high power, high frequency, and high temperature. These devices have surface or interface related problems, such as d
Autor:
Hisaya Sugita, Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi, Satoru Yamashita, Tomoyuki Suwa, Hidekazu Ishii, Yasumasa Koda, Akinobu Teramoto, Rihito Kuroda
Publikováno v:
ECS Transactions. 66:305-314
Introduction On-chip capacitors are used for various purposes in electronic devices, for example, AC coupling capacitors, bypass capacitors, sample and hold circuits for analog signals, and so on. For these purposes, a high capacitance density is req
Publikováno v:
ECS Transactions. 66:261-267
BiFeO3 (BFO) thin film has been developed for realizing high-performance ferroelectric memory and/or sensors.[1-3] Furthermore, BFO film has received attention for realizing high open-circuit voltage solar cells.[4] Unlike other conventional ferroele
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Tsukasa Motoya, Akinobu Teramoto, Hiroaki Tanaka, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 61:47-53
I. Introduction In order to reduce source/drain parasitic resistance (RSD) in LSIs, it is essential to reduce contact resistance (Rc) [1, 2]. As the Schottky barrier height (SBH) between silicide and silicon must be low to achieve low contact resisti
Autor:
Shigetoshi Sugawa, Hidetoshi Utsumi, Yasuyuki Shirai, Keiichi Hashimoto, Takatoshi Matsuo, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Yukihisa Nakao
Publikováno v:
ECS Transactions. 61:29-37
The SiNx gate spacer formation is one of the key processes in the miniaturized MISFETs, because the thickness of the gate spacer and the Si recess after the gate spacer formation etching have large impacts on the electrical properties of MISFETs [1,2
Autor:
Kazuhide Hasebe, Hirokazu Ueda, Takehiko Nomura, Tadahiro Ohmi, Y. Morozumi, Shigetoshi Sugawa, Hiroshi Kambayashi, Katsushige Harada, Nariaki Ikeda, Akinobu Teramoto
Publikováno v:
ECS Transactions. 58:155-166
The enhancement mode AlGaN/GaN hybrid MOS-HFETs on Si substrates have been demonstrated. The breakdown voltage of over 1.71 kV was achieved by investigating the epitaxial structure. Furthermore, a high integrity SiO2/Al2O3 gate stack has been demonst
Autor:
Tomoyuki Suwa, Kohki Nagata, Akinobu Teramoto, Tadahiro Ohmi, Atsushi Ogura, Takeo Hattori, Ichiro Hirosawa
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:N96-N98
Partially crystalline structures in thin SiO2 films formed by thermal oxidation of atomically flat Si surface were investigated by performing X-ray reflectometry and grazing incidence X-ray diffraction measurements. The densities of the SiO2 films we
Autor:
Shigetoshi Sugawa, Takayuki Muro, Takeo Hattori, Toyohiko Kinoshita, Tomoyuki Suwa, Tadahiro Ohmi, Akinobu Teramoto
Publikováno v:
ECS Transactions. 50:313-318
The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on both sides of the SiO2/Si(100) interface covered with more than one SiO2 monolayer, which is device grade, were measured with the probing depth of nearly 2 nm
Publikováno v:
ECS Transactions. 45:371-378
The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the s
Autor:
Tomoyuki Suwa, Toyohiko Kinoshita, Shigetoshi Sugawa, Takayuki Muro, Y. Kumagai, Tadahiro Ohmi, Takeo Hattori, Akinobu Teramoto
Publikováno v:
ECS Transactions. 45:453-460
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO2/Si interface structure