Zobrazeno 31 - 40
of 110
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Fumikazu Mizutani, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Tadahiro Ohmi
Publikováno v:
ECS Transactions. 2:67-71
Barrier type anodic oxides on aluminum-magnesium (Al-Mg) alloy in nonaqueous electrolyte solution are found to feature some excellent characteristics. Surface micro roughness is found by far less than that grown in aqueous electrolyte solution. Moist
Publikováno v:
Journal of The Electrochemical Society. 146:2235-2238
A small angle incident X-ray photoelectron spectroscopy (XPS) instrument was developed to perform high sensitivity analyses on silicon surfaces by reducing background noise. Silicon surfaces were treated by a new wet cleaning process based on ultra c
Publikováno v:
Journal of The Electrochemical Society. 145:3560-3569
Highly purified SiH 4 gas is required for manufacturing silicon semiconductor devices (e.g., the formation of Si-single crystal, poly-Si, Si 3 N 4 , and siliside thin films. We have newly established a technology for delicately measuring impurities i
Publikováno v:
Journal of The Electrochemical Society. 144:4005-4018
Technology for room temperature photoresist stripping has been established by using a neutral, environmentally friendly cleaning solution. The newly developed cleaning solution is a mixture of ultrapure water and isopropyl alcohol (IPA) with a small
Publikováno v:
Journal of The Electrochemical Society. 144:3275-3283
Cu deposition behavior onto Si surfaces was investigated as a function of dipping time in various chemical solutions. It shows the progressive phenomena for Cu deposition onto Si surfaces from the initial reaction to final equilibrium state so that w
Publikováno v:
Journal of The Electrochemical Society. 144:1482-1487
Conditions to remove contaminations adsorbed on a surface in wet cleaning processes have to be perfectly controlled. Megasonic excitation of ozonized water removes hydrocarbon contamination from silicon surfaces. When ozonized water was excited by me
Autor:
Tadahiro Ohmi
Publikováno v:
Journal of The Electrochemical Society. 143:2957-2964
An ultraclean wafer surface is crucial for high quality processing in Si technologies. Cleaning of the Si wafer surface has been accomplished by RCA wet cleaning for the past quarter century, where there exists high temperature processes consisting o
Publikováno v:
Journal of The Electrochemical Society. 142:2362-2372
The most important part in the tubing construction of the ultraclean gas delivery system is the automatic butt welding technology. The welding process, in which metal needs to be turned into a molten state to be welded, always causes the generation o
Publikováno v:
Journal of The Electrochemical Society. 142:1692-1698
By eliminating metal contamination caused by sputtering events occurring behind the wafer as well as in front of the wafer, the authors have successfully formed ultrashallow, low-reverse-bias-current n{sup +}p junctions by post implantation annealing
Publikováno v:
Journal of The Electrochemical Society. 142:971-978
The minimization of particle contamination during wet processing of Si wafers, such as from particles in solutions with surfactants, was studied. It was demonstrated that particle deposition on wafer surfaces in solutions is determined by an attracti