Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Benjamin Vincent"'
Autor:
Somya Gupta, Roger Loo, Clement Merckling, Eddy Simoen, Benjamin Vincent, Henk Vrielinck, Federica Gencarelli, Marc Heyns
Publikováno v:
ECS Transactions. 53:251-258
Deep levels associated with extended and point defects in MOS capacitors fabricated on unintentionally doped GeSn epitaxial layers on Ge-on-Si substrates have been studied by Deep Level Transient Spectroscopy (DLTS). A 9nm layer of Al2O3 is deposited
Autor:
Liesbeth Witters, Benjamin Vincent, Andriy Hikavyy, Jerome Mitard, Hugo Bender, Roger Loo, Naoto Horiguchi, Geert Eneman, Geert Hellings, Aaron Thean, Nadine Collaert
Publikováno v:
ECS Transactions. 50:131-143
In this work, three important processing steps controlling the performance of SiGe-channel Implant Free Quantum Well pFETs are presented: the thermal budget, the source/drain SiGe stressors and the narrow width effect. In the first part, it is demons
Autor:
Hugo Bender, Andriy Hikavyy, Olivier Richard, Benjamin Vincent, Roger Loo, Liesbeth Witters, Aaron Thean, Matty Caymax
Publikováno v:
ECS Transactions. 50:39-45
Stress implementation in Ge channel is mandatory in order to outperform strained Si hole mobilities in advanced p-MOSFET transistors [1]. The classical buffer layer used to compressively strain Ge is a thick SiGe Strain Relaxed Buffer (SRB). Differen
Autor:
Eddy Simoen, Federica Gencarelli, Lung-Ku Chu, Clement Merckling, Roger Loo, Benjamin Vincent
Publikováno v:
ECS Transactions. 50:279-287
Deep levels present in MOS capacitors, fabricated on GeSn epitaxial layers on Ge-on-Si substrates have been studied by Deep-Level Transient Spectroscopy (DLTS). The gate dielectric is composed of 9 nm Al2O3 deposited by Molecular Beam Epitaxy (MBE) o
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P282-P286
Selectivity of different SiGe processes toward oxide and nitride has been studied on both: blanket and patterned Si wafers. Three different precursors: silane, dichlorosilane and disilane were used for SiGe growth. It was found that the growth of SiG
Autor:
Alexis Franquet, Matty Caymax, Federica Gencarelli, Jelle Demeulemeester, Johan Meersschaut, Kristiaan Temst, Benjamin Vincent, Wilfried Vandervorst, Hugo Bender, André Vantomme, Alain Moussa, Marc Heyns, Roger Loo, Arul Kumar
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P134-P137
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown GeSn layers with Sn content in the range 6.4-12.6 at.%. A positive deviation from Vegard's law was observed and a new experimental bowing parameter w
Autor:
Aaron Thean, Arul Kumar, Matty Caymax, Roger Loo, Wilfried Vandervorst, Liesbeth Witters, Benjamin Vincent, Geert Eneman, Marc Heyns, Federica Gencarelli, Clement Merckling
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N35-N40
Si CMOS technology is currently changing with the introduction of strain and new materials (Ge, III/V) to increase carrier mobility and devicesaturationcurrent.Recently,excellentGe-basedpMOSchannel performance has been demonstrated with intrinsic hol
Autor:
Roger Loo, Jerome Mitard, Hugo Bender, Liesbeth Witters, Benjamin Vincent, Geert Hellings, Mitsuhiro Togo, Kristin De Meyer, S. Yamaguchi, Naoto Horiguchi, T. Chiarella, Andriy Hikavyy, An De Keersgieter, Nadine Collaert, Geert Eneman, Aaron Thean, Abdelkarim Mercha, Paola Favia, Anabela Veloso
Publikováno v:
ECS Transactions. 45:235-246
Novel device architectures offer improved scalability but come often at the price of increased layout sensitivity and a reduced or changed effectiveness of stressors and gate-last integration schemes. This work focuses on stress effects in n-type Fin
Autor:
Roger Loo, Kristiaan Temst, M. Adachi, Shigeaki Zaima, Jelle Demeulemeester, Marika Nakamura, T. Clarysse, Federica Gencarelli, Osamu Nakatsuka, Shotaro Takeuchi, Matty Caymax, André Vantomme, Yosuke Shimura, Benjamin Vincent
Publikováno v:
ECS Transactions. 41:231-238
In this paper, we reports our recent studies of the electrical and crystalline properties of heteroepitaxial Ge1-xSnx layers with various Sn content of 0~25%. We examined Ga-doping in strained Ge1-xSnx layers for developing source/drain stressor in C
Autor:
Liesbeth Witters, Clement Merckling, Bastien Douhard, Benjamin Vincent, Roger Loo, Dennis K.J. Lin, Olivier Richard, Matty Caymax, Laura Nyns, Marc Heyns, Hugo Bender, Federica Gencarelli, Alain Moussa, Wilfried Vandervorst
Publikováno v:
ECS Transactions. 41:239-248
Three advanced architectures for ultimate progress in Ge p-Metal Oxide Semiconductor Field Effect Transistors are discussed in this paper. Different routes for stress implementations in Ge channels, either biaxial or uniaxial, are proposed by advance