Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Tsukasa Motoya, Akinobu Teramoto, Hiroaki Tanaka, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 61:47-53
I. Introduction In order to reduce source/drain parasitic resistance (RSD) in LSIs, it is essential to reduce contact resistance (Rc) [1, 2]. As the Schottky barrier height (SBH) between silicide and silicon must be low to achieve low contact resisti
Publikováno v:
ECS Transactions. 45:371-378
The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the s
Autor:
Akinobu Teramoto, Shigetoshi Sugawa, Hiroaki Tanaka, Tatsunori Isogai, Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda
Publikováno v:
ECS Transactions. 28:315-324
A formation process of the silicide/Si contact with low contact resistance in the source/drain (S/D) regions has been developed in order to reduce the S/D electrodes series resistance of MOSFETs. Er that has a low Schottky barrier height (SBH) for el
Publikováno v:
ECS Meeting Abstracts. :2170-2170
Electrical and physical properties of ErSix on n-type Si(100) surfaces with an alkaline solution etching are investigated. The (111) facet of Si surface affects the SBH between ErSix and n-type Si, because the SBH depends on the surface orientation o
Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation
Publikováno v:
ECS Meeting Abstracts. :773-773
Electrical and physical properties of ErSix on n-type Si(100) (111) and (551) surfaces are reported. The ErSix density affects the work function of ErSix. A controlling the composition ratio of Er and Si is a key parameter for a reducing contact resi
Publikováno v:
ECS Meeting Abstracts. :2600-2600
The electrical and physical properties of ErSix on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights and the crystallinity of ErSix depend on the Si surface orientation. And the ErSix crystallinity affects the work functi