Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
Journal of The Electrochemical Society. 144:4005-4018
Technology for room temperature photoresist stripping has been established by using a neutral, environmentally friendly cleaning solution. The newly developed cleaning solution is a mixture of ultrapure water and isopropyl alcohol (IPA) with a small
Publikováno v:
Journal of The Electrochemical Society. 142:971-978
The minimization of particle contamination during wet processing of Si wafers, such as from particles in solutions with surfactants, was studied. It was demonstrated that particle deposition on wafer surfaces in solutions is determined by an attracti
Publikováno v:
Journal of The Electrochemical Society. 141:192-205
The surface of positive photoresist is hardened by the ion implantation process and becomes very difficult to remove thereafter. To investigate this phenomenon, the following aspects of photoresist were investigated: (i) the effectiveness of low‐en
Publikováno v:
Journal of The Electrochemical Society. 139:1721-1730
The addition of small amounts of surfactant and hydrogen peroxide (H 2 O 2 ) to the developer is shown to improve the performance of the photoresist development process. Exposed photoresist areas are dissolved more uniformly, the smoothness of Si sur