Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Tsukasa Motoya, Akinobu Teramoto, Hiroaki Tanaka, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 61:47-53
I. Introduction In order to reduce source/drain parasitic resistance (RSD) in LSIs, it is essential to reduce contact resistance (Rc) [1, 2]. As the Schottky barrier height (SBH) between silicide and silicon must be low to achieve low contact resisti
Autor:
Yun Zhuang, Ricardo Duyos Mateo, Takenao Nemoto, Yasa Sampurno, Ara Philipossian, Tadahiro Ohmi, Xun Gu, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 34:627-632
In this study, the tribological, thermal and kinetic attributes of Ti CMP process was investigated. Hitachi Chemical HS-T815 and HS-T605 slurries with different H2O2 concentrations were used to polish 200-mm blanket Ti wafers under different polishin
Autor:
Fumikazu Mizutani, Yasuyuki Shirai, Yasuhiro Kasase, Minoru Tahara, Tadahiro Ohmi, Masafumi Kitano
Publikováno v:
ECS Transactions. 16:89-94
Barrier type anodic oxides film of the aluminum alloy in nonaqueous electrolyte solution has some excellent characteristics as a passivation film. In electrolyte that used the ethylene glycol as nonaqueous solution, the thickness of the anodic oxides
Autor:
Fumikazu Mizutani, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Tadahiro Ohmi
Publikováno v:
ECS Transactions. 2:67-71
Barrier type anodic oxides on aluminum-magnesium (Al-Mg) alloy in nonaqueous electrolyte solution are found to feature some excellent characteristics. Surface micro roughness is found by far less than that grown in aqueous electrolyte solution. Moist
Autor:
Tadahiro Ohmi
Publikováno v:
Journal of The Electrochemical Society. 143:2957-2964
An ultraclean wafer surface is crucial for high quality processing in Si technologies. Cleaning of the Si wafer surface has been accomplished by RCA wet cleaning for the past quarter century, where there exists high temperature processes consisting o
Publikováno v:
Journal of The Electrochemical Society. 142:2362-2372
The most important part in the tubing construction of the ultraclean gas delivery system is the automatic butt welding technology. The welding process, in which metal needs to be turned into a molten state to be welded, always causes the generation o
Autor:
Michael S. K. Chen, Atsushi Ohki, Koji Kawada, Tadahiro Ohmi, Masakazu Nakamura, Shinji Takahashi, Tsuyoshi Watanabe, Shogo Miyoshi, Yoshinori Nakagawa
Publikováno v:
Journal of The Electrochemical Society. 140:1691-1699
A complete chromium oxide (Cr[sub 2]O[sub 3]) passivation technology has been developed for stainless steel surfaces for use in high purity gas-delivery systems and process chambers. Starting with an electrochemical buffing (ECB) to add to electro-po
Publikováno v:
Journal of The Electrochemical Society. 140:804-810
To manufacture ULSI devices with high performance and reliability in large volume, further integration and miniaturization are being promoted. The key issue in realizing what we call "Noise‐Free Manufacturing" is to keep the wafer surface ultraclea
Publikováno v:
ECS Meeting Abstracts. :2170-2170
Electrical and physical properties of ErSix on n-type Si(100) surfaces with an alkaline solution etching are investigated. The (111) facet of Si surface affects the SBH between ErSix and n-type Si, because the SBH depends on the surface orientation o
Autor:
Masayuki Saeki, Fumikazu Mizutani, Yasuhiro Kawase, Yasuyuki Shirai, Masafumi Kitano, Tadahiro Ohmi
Publikováno v:
Journal of The Electrochemical Society. 154:C530
Aluminum alloys are key materials for advanced large-scale integration (LSI)/flat panel display (FPD) plasma process equipment to drastically improve the process performance. There exists a severe disadvantage for aluminum-alloy process chambers, how