Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sun, Jin"'
Publikováno v:
Electrochemical and Solid-State Letters. 15:B9-B12
Amorphous SiGe:H (a-SiGe:H) single junction solar cells having light absorbing layers with different Ge profiles were fabricated to investigate the effects of the Ge composition profiles on the solar cell performance. The structures of a-SiGe:H layer
Publikováno v:
Electrochemical and Solid-State Letters. 13:G17
The antireflection (AR) properties of Al 2 O 3 and Al x Ti 1―x O y films were investigated for the application of an AR coating of thin-film solar cells. Their optical transmittance was measured to exceed 85% over the entire visible and near-IR spe
Autor:
Yong-Hae Kim, Musarrat Hasan, Jong Hyun Ahn, Sang-Hee Ko Park, Min Seok Jo, Sun Jin Yun, Jae Bon Koo, Houk Jang, Jeehoon Kim, Hyunsang Hwang, Jonghyun Rho, Seung Youl Kang
Publikováno v:
Electrochemical and Solid-State Letters. 13:H80
The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200°C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improve
Autor:
Seong Hyun Kim, Sun Jin Yun, Chan Hoe Ku, Yong Suk Yang, Jung Hun Lee, Jung Wook Lim, Jae Bon Koo, Sang Chul Lim
Publikováno v:
Electrochemical and Solid-State Letters. 9:G320
We report on the fabrication of dual-gate organic thin-film transistors using plasma-enhanced atomic layer deposited 150 nm thick Al 2 O 3 and 300 nm thick parylene as gate dielectrics and pentacene as a semiconductor. The threshold voltage (V th ) i
Publikováno v:
Electrochemical and Solid-State Letters. 9:F8
The electrical properties of aluminum silicate (AlSi x O y ) films grown at 120 and 150°C by plasma-enhanced atomic layer deposition were investigated for the application on flexible devices. AlSi x O y films with dielectricconstants of 5.6 and 6.8
Publikováno v:
Electrochemical and Solid-State Letters. 7:G185
A two-layer oxide comprised of SiO 2 and Al 2 O 3 grown at 150°C by atomic layer deposition (ALD) was investigated as the gate insulator for ultralow temperature poly-Si thin-film transistors (ULTPS TFTs). The two-layer gate insulator satisfied good