Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Tsukasa Motoya, Akinobu Teramoto, Hiroaki Tanaka, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 61:47-53
I. Introduction In order to reduce source/drain parasitic resistance (RSD) in LSIs, it is essential to reduce contact resistance (Rc) [1, 2]. As the Schottky barrier height (SBH) between silicide and silicon must be low to achieve low contact resisti
Publikováno v:
ECS Transactions. 45:371-378
The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the s
Autor:
Tomoyuki Suwa, Toyohiko Kinoshita, Shigetoshi Sugawa, Takayuki Muro, Y. Kumagai, Tadahiro Ohmi, Takeo Hattori, Akinobu Teramoto
Publikováno v:
ECS Transactions. 45:453-460
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO2/Si interface structure
Publikováno v:
ECS Transactions. 41:147-156
The atomically flat surface is obtained by the ultra-pure argon ambient at relatively low temperature less than 900 °C, and it can be maintained by using the N2 ambient with light shielding cleaning and the radical oxidation. The crystal originated
Autor:
Tadahiro Ohmi, Akinobu Teramoto, Shigetoshi Sugawa, Kazumasa Kawase, Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Tomoyuki Suwa
Publikováno v:
ECS Transactions. 41:365-373
The electrical and physical properties of ErSix on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and th
Autor:
Tadahiro Ohmi, Akinobu Teramoto, Takeo Hattori, Tomoyuki Suwa, Yuki Kumagai, Toyohiko Kinoshita, Takayuki Muro
Publikováno v:
ECS Transactions. 35:115-122
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) versus oxygen molecules (OM) are reported. Most of intermediate oxidation states of Si, so called suboxides, consisting of
Autor:
Yun Zhuang, Ricardo Duyos Mateo, Takenao Nemoto, Yasa Sampurno, Ara Philipossian, Tadahiro Ohmi, Xun Gu, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 34:627-632
In this study, the tribological, thermal and kinetic attributes of Ti CMP process was investigated. Hitachi Chemical HS-T815 and HS-T605 slurries with different H2O2 concentrations were used to polish 200-mm blanket Ti wafers under different polishin
Publikováno v:
ECS Transactions. 25:115-129
Introduction It is very important to improve the CMOS performance such as current drivability to satisfy the severer demand of circuits. It was reported that the mobility in the MOSFETs fabricated on flattened Si surface has been improved [1]. On the
Autor:
Fumikazu Mizutani, Yasuyuki Shirai, Yasuhiro Kasase, Minoru Tahara, Tadahiro Ohmi, Masafumi Kitano
Publikováno v:
ECS Transactions. 16:89-94
Barrier type anodic oxides film of the aluminum alloy in nonaqueous electrolyte solution has some excellent characteristics as a passivation film. In electrolyte that used the ethylene glycol as nonaqueous solution, the thickness of the anodic oxides
Autor:
Fumikazu Mizutani, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Tadahiro Ohmi
Publikováno v:
ECS Transactions. 2:67-71
Barrier type anodic oxides on aluminum-magnesium (Al-Mg) alloy in nonaqueous electrolyte solution are found to feature some excellent characteristics. Surface micro roughness is found by far less than that grown in aqueous electrolyte solution. Moist