Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Tsukasa Motoya, Akinobu Teramoto, Hiroaki Tanaka, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 61:47-53
I. Introduction In order to reduce source/drain parasitic resistance (RSD) in LSIs, it is essential to reduce contact resistance (Rc) [1, 2]. As the Schottky barrier height (SBH) between silicide and silicon must be low to achieve low contact resisti
Autor:
Shigetoshi Sugawa, Hidetoshi Utsumi, Yasuyuki Shirai, Keiichi Hashimoto, Takatoshi Matsuo, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Yukihisa Nakao
Publikováno v:
ECS Transactions. 61:29-37
The SiNx gate spacer formation is one of the key processes in the miniaturized MISFETs, because the thickness of the gate spacer and the Si recess after the gate spacer formation etching have large impacts on the electrical properties of MISFETs [1,2
Publikováno v:
ECS Transactions. 45:371-378
The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the s
Autor:
Tomoyuki Suwa, Toyohiko Kinoshita, Shigetoshi Sugawa, Takayuki Muro, Y. Kumagai, Tadahiro Ohmi, Takeo Hattori, Akinobu Teramoto
Publikováno v:
ECS Transactions. 45:453-460
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed utilizing oxygen radicals (ORs) and oxygen molecules (OMs) with or without forming gas annealing (FGA) are reported. The SiO2/Si interface structure
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Tadashi Watanabe, Shigetoshi Sugawa, Yukihisa Nakao
Publikováno v:
ECS Transactions. 45:421-428
High chemical etching resistance is strongly required for silicon nitride at low temperature such as 400oC or below in order to apply to the gate spacer, the contact etching stop layer, because various new materials which are thermally instable are i
Publikováno v:
ECS Transactions. 41:147-156
The atomically flat surface is obtained by the ultra-pure argon ambient at relatively low temperature less than 900 °C, and it can be maintained by using the N2 ambient with light shielding cleaning and the radical oxidation. The crystal originated
Autor:
Tadahiro Ohmi, Akinobu Teramoto, Shigetoshi Sugawa, Kazumasa Kawase, Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Tomoyuki Suwa
Publikováno v:
ECS Transactions. 41:365-373
The electrical and physical properties of ErSix on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) depend on the Si substrate orientation. On a Si(100) surface, a low electron SBH around 0.3 eV is obtained and th
Autor:
Tadahiro Ohmi, Akinobu Teramoto, Takeo Hattori, Tomoyuki Suwa, Yuki Kumagai, Toyohiko Kinoshita, Takayuki Muro
Publikováno v:
ECS Transactions. 35:115-122
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) versus oxygen molecules (OM) are reported. Most of intermediate oxidation states of Si, so called suboxides, consisting of
Autor:
Yun Zhuang, Ricardo Duyos Mateo, Takenao Nemoto, Yasa Sampurno, Ara Philipossian, Tadahiro Ohmi, Xun Gu, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 34:627-632
In this study, the tribological, thermal and kinetic attributes of Ti CMP process was investigated. Hitachi Chemical HS-T815 and HS-T605 slurries with different H2O2 concentrations were used to polish 200-mm blanket Ti wafers under different polishin
Autor:
Akinobu Teramoto, Shigetoshi Sugawa, Hiroaki Tanaka, Tatsunori Isogai, Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda
Publikováno v:
ECS Transactions. 28:315-324
A formation process of the silicide/Si contact with low contact resistance in the source/drain (S/D) regions has been developed in order to reduce the S/D electrodes series resistance of MOSFETs. Er that has a low Schottky barrier height (SBH) for el