Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Shigetoshi Sugawa, Hidetoshi Utsumi, Yasuyuki Shirai, Keiichi Hashimoto, Takatoshi Matsuo, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Yukihisa Nakao
Publikováno v:
ECS Transactions. 61:29-37
The SiNx gate spacer formation is one of the key processes in the miniaturized MISFETs, because the thickness of the gate spacer and the Si recess after the gate spacer formation etching have large impacts on the electrical properties of MISFETs [1,2
Autor:
Tomoyuki Suwa, Kohki Nagata, Akinobu Teramoto, Tadahiro Ohmi, Atsushi Ogura, Takeo Hattori, Ichiro Hirosawa
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:N96-N98
Partially crystalline structures in thin SiO2 films formed by thermal oxidation of atomically flat Si surface were investigated by performing X-ray reflectometry and grazing incidence X-ray diffraction measurements. The densities of the SiO2 films we
Autor:
Takenao Nemoto, Xun Gu, Shigetoshi Sugawa, Yugo Tomita, Akinobu Teramoto, Tadahiro Ohmi, Rihito Kuroda
Publikováno v:
Journal of The Electrochemical Society. 159:H407-H411
Autor:
Fumikazu Mizutani, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Tadahiro Ohmi
Publikováno v:
ECS Transactions. 2:67-71
Barrier type anodic oxides on aluminum-magnesium (Al-Mg) alloy in nonaqueous electrolyte solution are found to feature some excellent characteristics. Surface micro roughness is found by far less than that grown in aqueous electrolyte solution. Moist
Publikováno v:
Journal of The Electrochemical Society. 146:2235-2238
A small angle incident X-ray photoelectron spectroscopy (XPS) instrument was developed to perform high sensitivity analyses on silicon surfaces by reducing background noise. Silicon surfaces were treated by a new wet cleaning process based on ultra c
Publikováno v:
Journal of The Electrochemical Society. 145:3560-3569
Highly purified SiH 4 gas is required for manufacturing silicon semiconductor devices (e.g., the formation of Si-single crystal, poly-Si, Si 3 N 4 , and siliside thin films. We have newly established a technology for delicately measuring impurities i
Autor:
Takasaki Toshimichi, Hideharu Hasegawa, Yoshio Ishihara, Tadahiro Ohmi, Ryousuke Fukushima, Sumiyo Yamane, Takuya Ikeda
Publikováno v:
Journal of The Electrochemical Society. 141:246-250
A measurement technology for trace impurities in hydrogen chloride (HCl) was developed in relation to future ultralarge scale integration (ULSI). We developed an electrical conductivity measurement system for analyzing liquified HCl with an in-line h
Publikováno v:
Journal of The Electrochemical Society. 140:811-818
Realization of an ultraclean Si wafer surface is essential for achieving the advanced process in the ultralarge scale integrated production such as low‐temperature process and high selectivity. An ultraclean wafer surface is defined as a surface co
Publikováno v:
Journal of The Electrochemical Society. 140:371-377
Gas molecular-flow preshowering treatment onto the silicon (Si) substrate surface during the temperature ramp prior to epitaxial Si film formation has been proposed in order to lower the epitaxy process temperature in chemical vapor deposition (CVD).
Publikováno v:
Journal of The Electrochemical Society. 139:2133-2142
The effect of the wet chemical cleaning process on the surface microroughness of Si wafers was studied, using CZ, FZ, and EPI wafers. It has been shown that the surface microroughness affects the dielectric breakdown characteristics of the oxide: the