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Autor:
Abe Shunsuke, Handa Hiroyuki, Takahashi Ryota, Imaizumi Kei, Fukidome Hirokazu, Suemitsu Maki
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 12, Pp 1888-1891 (2010)
Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in
Externí odkaz:
https://doaj.org/article/8dc7c545703b45a4911e22e2151fcb0c