Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Cao, Q. P."'
Publikováno v:
Nanoscale Research Letters, Vol 3, Iss 12, Pp 486-490 (2008)
Abstract In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and
Externí odkaz:
https://doaj.org/article/4d408446acea4f2fb80a55b66b3bd629
Publikováno v:
Nanoscale Research Letters, Vol 2, Iss 6, Pp 303-307 (2007)
AbstractTen-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have
Externí odkaz:
https://doaj.org/article/01f49397dbeb480ea935acdd28275930
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 37 (2011)
Abstract We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation
Externí odkaz:
https://doaj.org/article/475d9c5ac0444492b6bf52e878cc8041