Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Haroon Ahmed"'
Autor:
William I. Milne, Kbk Teo, Manishkumar Chhowalla, Haroon Ahmed, L. A. W. Robinson, Gehan A. J. Amaratunga, Seung-Beck Lee, David G. Hasko
Publikováno v:
MRS Proceedings. 741
We describe the fabrication of self-aligned split gate electrodes on suspended multiwalled carbon nanotube structures. A suspended multiwalled carbon nanotube structure was used as an evaporation mask for the deposition of metal electrodes resulting
Autor:
Pierre Legagneux, Gehan A. J. Amaratunga, William I. Milne, Manishkumar Chhowalla, Y. Nedellec, G. Pirio, Didier Pribat, Kenneth B. K. Teo, Haroon Ahmed, Seung-Beck Lee, David G. Hasko
Publikováno v:
MRS Proceedings. 706
Plasma Enhanced Chemical Vapour Deposition is an extremely versatile technique for directly growing multiwalled carbon nanotubes onto various substrates. We will demonstrate the deposition of vertically aligned nanotube arrays, sparsely or densely po
Publikováno v:
MRS Proceedings. 199
A new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no
Autor:
David J. Smith, C. J. D. Catto, W. O. Saxton, W. C. Nixon, K. C. A. Smith, J. R. A. Cleaver, A.E. Timbs, R. A. Camps, P. W. Turner, P. M. Ross, Haroon Ahmed, V. E. Cosslett
Publikováno v:
Nature. 281:49-51
The resolution that may be achieved with an electron microscope can be improved by increasing the accelerating voltage, provided that the electrical and mechanical design is of a sufficiently high standard to realise the theoretical performance1,2. S
Publikováno v:
MRS Proceedings. 1
Conditions for the scanning e-beam activation of P and As implanted source and drain junctions in production NMOS Si gate devices have been established. MOS devices with e-beam annealed, As-implanted, source and drain regions have been produced. The
Publikováno v:
MRS Proceedings. 52
The rate and direction of regrowth of amorphous layers, created by self-implantation, in silicon-on-sapphire (SOS) have been studied using time resolved reflectivity (TRR) experiments performed simultaneously at two wavelengths. Regrowth of an amorph
A Study of Melting and Resolidification of Silicon-on-Insulator Structures Formed by Lateral Epitaxy
Publikováno v:
MRS Proceedings. 53
The formation of silicon-on-insulator structures, by recrystallising polycrystalline silicon films with a dual electron beam technique, has been studied over a wide range of conditions. The quality of the layers has been assessed by examining cross-s
Autor:
Haroon Ahmed, K. M. Barfoot, D. J. Godfrey, R.A. McMahon, D. Dieumegard, L. Karapiperis, G. Garry, D.A. Williams
Publikováno v:
MRS Proceedings. 107
The effect of selective epitaxial growth (SEG) of silicon in the seed windows of silicon on insulator structures prior to recrystallization has been investigated. Subsequent zone melt recrystallization of these structures was performed in a dual elec