Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Shen, Ke"'
Publikováno v:
Journal of Electronics (China). 14:270-278
Detailed analysis on transient characteristics of ECL circuits are performed in this paper, then a relatively exact propagation delay expression applied for all temperatures is presented. The cryogenic characteristics of some dominant parameters cont
Publikováno v:
Journal of Electronics (China). 13:275-283
Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modificatio