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pro vyhledávání: ''
Autor:
David A. Horsley, Sagi Mathai, Shih-Yuan Wang, Jeffrey B. Chou, Ming C. Wu, B. E. Yoxall, Kyoungsik Yu, Michael R. T. Tan
Publikováno v:
Chou, Jeffrey; Yu, Kyoungsik; Horsley, David; Yoxall, Brian; Mathai, Sagi; Tan, Michael R.; et al.(2009). Robust free space board-to-board optical interconnect with closed loop MEMS tracking. Applied Physics A: Materials Science & Processing, 95(4), pp 973-982. doi: 10.1007/s00339-009-5126-1. Retrieved from: http://www.escholarship.org/uc/item/9c02h651
We present a free-space optical interconnect system capable of dynamic closed-loop optical alignment using a microlens scanner with a proportional integral and derivative controller. Electrostatic microlens scanners based on combdrive actuators are d
Publikováno v:
Ren, Feng; Xiao, Xiang Heng; Cai, Guang Xu; Wang, Jian Bo; & Jiang, Chang Zhong. (2009). Engineering embedded metal nanoparticles with ion beam technology. Applied Physics A: Materials Science & Processing, 96(2), pp 317-325. doi: 10.1007/s00339-009-5205-3. Retrieved from: http://www.escholarship.org/uc/item/9w17x4nh
In this paper, we summarize our recent results of study on how to engineer the embedded metal nanoparticles in silica by ion implantation and ion irradiation technologies, including controlling the size, distribution and morphology of nanoparticles.
Autor:
Leide P. Cavalcanti, Stefan Kowarik, Frank Schreiber, Alexander Gerlach, S. Sellner, Oleg Konovalov
Publikováno v:
Kowarik, Stefan; Gerlach, Alexander; Sellner, Stefan; Cavalcanti, Leide; Konovalov, Oleg; & Schreiber, Frank. (2009). Real-time X-ray diffraction measurements of structural dynamics and polymorphism in diindenoperylene growth. Applied Physics A: Materials Science & Processing, 95(1), pp 233-239. doi: 10.1007/s00339-008-5012-2. Retrieved from: http://www.escholarship.org/uc/item/0mf58226
'Applied Physics A ', vol: 95, pages: 233-239 (2009)
'Applied Physics A ', vol: 95, pages: 233-239 (2009)
We investigate the temperature-dependent polymorphs in diindenoperylene (DIP) thin films on sapphire and silicon oxide substrates using in situ X-ray scattering. On both substrates the DIP unit cell is very similar to the high-temperature phase of bu
Autor:
Logeeswaran Vj, M. Saif Islam, David A. Horsley, Feiyang Wu, Shih-Yuan Wang, Denny Houng, Sagi Mathai, Robert G. Walmsley, Michael R. T. Tan
Publikováno v:
Wu, Feiyang; VJ, Logeeswaran; Islam, M. Saif; Horsley, David A.; Walmsley, Robert G.; Mathai, Sagi; et al.(2009). Integrated receiver architectures for board-to-board free-space optical interconnects. Applied Physics A: Materials Science & Processing, 95(4), pp 1079-1088. doi: 10.1007/s00339-009-5114-5. Retrieved from: http://www.escholarship.org/uc/item/62p941r4
In many computer and server communications copper cables and wires are currently being used for data transmission and interconnects. However, due to significant shortcomings, such as long transmission time, high noise level, unstable electrical prope
Autor:
Hans-Ulrich Krebs, Johanna Röder
Publikováno v:
Applied Physics A. 90(4):609-613
The development of the surface roughness of amorphous ZrO2 layers with different thicknesses, which were laser deposited on nanocrystalline Ag surfaces, was analyzed by atomic force microscopy. With increasing ZrO2 layer thickness first the surface s
Autor:
Larry A. Coldren, Yu-Chia Chang
Publikováno v:
Chang, Yu-Chia; & Coldren, Larry A.(2009). High-efficiency, high-speed VCSELs for optical interconnects. Applied Physics A: Materials Science & Processing, 95(4), pp 1033-1037. doi: 10.1007/s00339-009-5112-7. Retrieved from: http://www.escholarship.org/uc/item/76k4t2fn
High-efficiency, high-speed, tapered-oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) emitting at 980 nm have been demonstrated. By carefully engineering the tapered oxide aperture, the mode volume can be greatly reduced without addin
Autor:
Steven J. Barcelo, Thomas J. Richardson, Vincent Berube, Mildred S. Dresselhaus, Matthew S. Rogers, Xiaobo Chen, Gang Chen, Costas P. Grigoropoulos, Samuel S. Mao
Publikováno v:
Rogers, Matthew; Barcelo, Steven; Chen, Xiaobo; Richardson, Thomas J.; Berube, Vincent; Chen, Gang; et al.(2009). Hydrogen storage characteristics of nanograined free-standing magnesium–nickel films. Applied Physics A: Materials Science & Processing, 96(2), pp 349-352. doi: 10.1007/s00339-009-5198-y. Retrieved from: http://www.escholarship.org/uc/item/41t1x27p
Free-standing magnesium–nickel (Mg–Ni) films with extensive nanoscale grain structures were fabricated using a combination of pulsed laser deposition and film delaminating processes. Hydrogen sorption and desorption properties of the films, free
Autor:
Brian R. Koch, Ying-Hao Kuo, Erica Lively, Alexander W. Fang, Richard Jones, Di Liang, Matthew N. Sysak, Hui-Wen Chen, John E. Bowers, Omri Raday
Publikováno v:
Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N.; Koch, Brian R.; Lively, Erica; et al.(2009). Hybrid silicon evanescent approach to optical interconnects. Applied Physics A: Materials Science & Processing, 95(4), pp 1045-1057. doi: 10.1007/s00339-009-5118-1. Retrieved from: http://www.escholarship.org/uc/item/1826b61p
We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. Th
Publikováno v:
Applied Physics A. 96(1):235-253
Predominant dislocation types in solar silicon are dissociated into 30°- and 90°-partials with reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D band at the stacking fault connecting the two partials, the e
Autor:
R. Stanley Williams, Sagi Mathai, Xuema Li, M. Saif Islam, Shih-Yuan Wang, V. J. Logeeswaran, Takehiro Onishi, Joseph Straznicky, Nobuhiko P. Kobayashi, Andrew J. Lohn
Publikováno v:
Kobayashi, Nobuhiko P.; Mathai, Sagi; Li, Xuema; Logeeswaran, V. J.; Islam, M. Saif; Lohn, Andrew; et al.(2009). Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms. Applied Physics A: Materials Science & Processing, 95(4), pp 1005-1013. doi: 10.1007/s00339-009-5110-9. Retrieved from: http://www.escholarship.org/uc/item/0d11f05j
A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not requi