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Autor:
Brian R. Koch, Ying-Hao Kuo, Erica Lively, Alexander W. Fang, Richard Jones, Di Liang, Matthew N. Sysak, Hui-Wen Chen, John E. Bowers, Omri Raday
Publikováno v:
Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N.; Koch, Brian R.; Lively, Erica; et al.(2009). Hybrid silicon evanescent approach to optical interconnects. Applied Physics A: Materials Science & Processing, 95(4), pp 1045-1057. doi: 10.1007/s00339-009-5118-1. Retrieved from: http://www.escholarship.org/uc/item/1826b61p
We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. Th
Publikováno v:
Applied Physics A. 96(1):235-253
Predominant dislocation types in solar silicon are dissociated into 30°- and 90°-partials with reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D band at the stacking fault connecting the two partials, the e
Autor:
R. Stanley Williams, Sagi Mathai, Xuema Li, M. Saif Islam, Shih-Yuan Wang, V. J. Logeeswaran, Takehiro Onishi, Joseph Straznicky, Nobuhiko P. Kobayashi, Andrew J. Lohn
Publikováno v:
Kobayashi, Nobuhiko P.; Mathai, Sagi; Li, Xuema; Logeeswaran, V. J.; Islam, M. Saif; Lohn, Andrew; et al.(2009). Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms. Applied Physics A: Materials Science & Processing, 95(4), pp 1005-1013. doi: 10.1007/s00339-009-5110-9. Retrieved from: http://www.escholarship.org/uc/item/0d11f05j
A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not requi
Publikováno v:
Tien, Ming-Chun; Ohta, Aaron T.; Yu, Kyoungsik; Neale, Steven L.; & Wu, Ming C.(2009). Heterogeneous integration of InGaAsP microdisk laser on a silicon platform using optofluidic assembly. Applied Physics A: Materials Science & Processing, 95(4), pp 967-972. doi: 10.1007/s00339-009-5125-2. Retrieved from: http://www.escholarship.org/uc/item/2m5341kq
Heterogeneous integration of InGaAsP microdisk lasers on a silicon platform is demonstrated experimentally using an optofluidic assembly technique. The 200-nm-thick, 5- and 10-μm-diameter microdisk lasers are fabricated on InP and then released from