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Publikováno v:
Applied Physics A. 101(2):225-229
A new method for simple and economic fabrication of diffractive optical elements (DOEs) with three and four phase levels, by UV nanosecond (ns) laser ablation is presented. The technique is based on the combination of two sequentially generated compl
Autor:
Hans-Ulrich Krebs, Susanne Seyffarth
Publikováno v:
Applied Physics A. 99(4):735-740
Triangular and quadratic Cu pyramids were epitaxially grown on Si(111) and Si(100) substrates, respectively, by pulsed laser deposition at elevated substrate temperatures above 200°C as well as by post-annealing of closed Cu layers prepared at room
Autor:
Steven J. Barcelo, Thomas J. Richardson, Vincent Berube, Mildred S. Dresselhaus, Matthew S. Rogers, Xiaobo Chen, Gang Chen, Costas P. Grigoropoulos, Samuel S. Mao
Publikováno v:
Rogers, Matthew; Barcelo, Steven; Chen, Xiaobo; Richardson, Thomas J.; Berube, Vincent; Chen, Gang; et al.(2009). Hydrogen storage characteristics of nanograined free-standing magnesium–nickel films. Applied Physics A: Materials Science & Processing, 96(2), pp 349-352. doi: 10.1007/s00339-009-5198-y. Retrieved from: http://www.escholarship.org/uc/item/41t1x27p
Free-standing magnesium–nickel (Mg–Ni) films with extensive nanoscale grain structures were fabricated using a combination of pulsed laser deposition and film delaminating processes. Hydrogen sorption and desorption properties of the films, free
Autor:
Brian R. Koch, Ying-Hao Kuo, Erica Lively, Alexander W. Fang, Richard Jones, Di Liang, Matthew N. Sysak, Hui-Wen Chen, John E. Bowers, Omri Raday
Publikováno v:
Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N.; Koch, Brian R.; Lively, Erica; et al.(2009). Hybrid silicon evanescent approach to optical interconnects. Applied Physics A: Materials Science & Processing, 95(4), pp 1045-1057. doi: 10.1007/s00339-009-5118-1. Retrieved from: http://www.escholarship.org/uc/item/1826b61p
We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. Th
Publikováno v:
Applied Physics A. 96(1):235-253
Predominant dislocation types in solar silicon are dissociated into 30°- and 90°-partials with reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D band at the stacking fault connecting the two partials, the e
Autor:
R. Stanley Williams, Sagi Mathai, Xuema Li, M. Saif Islam, Shih-Yuan Wang, V. J. Logeeswaran, Takehiro Onishi, Joseph Straznicky, Nobuhiko P. Kobayashi, Andrew J. Lohn
Publikováno v:
Kobayashi, Nobuhiko P.; Mathai, Sagi; Li, Xuema; Logeeswaran, V. J.; Islam, M. Saif; Lohn, Andrew; et al.(2009). Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms. Applied Physics A: Materials Science & Processing, 95(4), pp 1005-1013. doi: 10.1007/s00339-009-5110-9. Retrieved from: http://www.escholarship.org/uc/item/0d11f05j
A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not requi
Publikováno v:
Tien, Ming-Chun; Ohta, Aaron T.; Yu, Kyoungsik; Neale, Steven L.; & Wu, Ming C.(2009). Heterogeneous integration of InGaAsP microdisk laser on a silicon platform using optofluidic assembly. Applied Physics A: Materials Science & Processing, 95(4), pp 967-972. doi: 10.1007/s00339-009-5125-2. Retrieved from: http://www.escholarship.org/uc/item/2m5341kq
Heterogeneous integration of InGaAsP microdisk lasers on a silicon platform is demonstrated experimentally using an optofluidic assembly technique. The 200-nm-thick, 5- and 10-μm-diameter microdisk lasers are fabricated on InP and then released from