Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ruixuan Wu"'
Publikováno v:
Extreme Ultraviolet Lithography 2020.
Features in forbidden pitch have limited exposure latitude and depth of focus in lithography exposure. This paper provides an analysis of forbidden pitch in extreme ultraviolet lithography (EUVL) from the perspective of rigorous simulation and source
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
Mask defectivity is a critical challenge to the high-volume production of extreme ultraviolet lithography (EUVL). In a similar way to the optical proximity correction (OPC), mask absorber pattern optimization could weaken the impact of defect on lith