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pro vyhledávání: '"Bruce A. Smith"'
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Rajiv Naresh Sejpal, Bruce W. Smith
Publikováno v:
Optical and EUV Nanolithography XXXV.
Autor:
Rajiv N. Sejpal, Bruce W. Smith
Publikováno v:
Photomask Technology 2021.
Alternatives to Ta-based absorbers are being considered for next generation lithography nodes to reduce 3D mask effects and to improve image modulation through phase interference. Low complex refractive index (n – ik) materials can provide phase sh
Autor:
Zac Levinson, Bruce W. Smith
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Aberrations must be sufficiently controlled to make moving to a higher numerical aperture worthwhile. Traditional isomorphic imaging systems form the same image regardless of their rotation. Likewise, the aberration basis chosen for isomorphic optics
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
As extreme ultraviolet lithography (EUVL) technology progresses towards and below sub-7nm generations, polarization effects will begin to have an impact. Moving to higher NA will introduce polarization effects at all locations: the mask plane, the op
Autor:
Bruce W. Smith, Lilian Neim
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
As the extreme ultraviolet (EUV) lithography technology progresses towards and below sub-7nm generations, polarization effects will begin to have an impact. As numerical apertures increase, the consequences at both the mask and the wafer plane need t
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2018.
As the power of laser produced plasma sources has increased, EUV lens heating has become a major component of process variation. Differential lens heating can cause thermal aberrations which affect system drift during operation, therefore pupil plane
Autor:
Bruce W. Smith, Zac Levinson
Publikováno v:
SPIE Proceedings.
Next-generation EUV lithography systems will use anamorphic optics to achieve high-NA. The well-known Zernike circle polynomials do not describe the sixteen primary aberrations of these anamorphic optical systems though. We propose to use a basis whi