Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Yang, Qingxin"'
Autor:
Wang J; Center of Ultra-precision Optoelectronic Instrument Engineering, Harbin Institute of Technology, Harbin 150080, China. p.jin@hit.edu.cn linjie@hit.edu.cn and Key Laboratory of Micro-systems and Micro-structures Manufacturing (Harbin Institute of Technology), Ministry of Education, Harbin 150080, China., Jia X; Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. wangzj@semi.ac.cn and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Wang Z; School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China., Liu W; Department of Physics, Harbin Institute of Technology, Harbin 150080, China., Zhu X; Department of Physics, Harbin Institute of Technology, Harbin 150080, China., Huang Z; Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. wangzj@semi.ac.cn and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Yu H; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China., Yang Q; Department of Physics, Harbin Institute of Technology, Harbin 150080, China., Sun Y; School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China., Wang Z; Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. wangzj@semi.ac.cn and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Qu S; Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. wangzj@semi.ac.cn and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Lin J; Center of Ultra-precision Optoelectronic Instrument Engineering, Harbin Institute of Technology, Harbin 150080, China. p.jin@hit.edu.cn linjie@hit.edu.cn and Key Laboratory of Micro-systems and Micro-structures Manufacturing (Harbin Institute of Technology), Ministry of Education, Harbin 150080, China., Jin P; Center of Ultra-precision Optoelectronic Instrument Engineering, Harbin Institute of Technology, Harbin 150080, China. p.jin@hit.edu.cn linjie@hit.edu.cn and Key Laboratory of Micro-systems and Micro-structures Manufacturing (Harbin Institute of Technology), Ministry of Education, Harbin 150080, China., Wang Z; Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. wangzj@semi.ac.cn and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Publikováno v:
Nanoscale [Nanoscale] 2020 Aug 13; Vol. 12 (31), pp. 16403-16408.