Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Li, Hengyi"'
Autor:
Yang B; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Gao W; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Li H; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Gao P; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Yang M; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Pan Y; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Wang C; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Yang Y; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Huo N; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn., Zheng Z; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China. zhengzhq5@mail2.sysu.edu.cn., Li J; School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China. gaowei317040@m.scnu.edu.cn.
Publikováno v:
Nanoscale [Nanoscale] 2023 Feb 16; Vol. 15 (7), pp. 3520-3531. Date of Electronic Publication: 2023 Feb 16.
Autor:
Gao P; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China., Yang M; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China., Wang C; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China., Li H; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China., Yang B; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China., Zheng Z; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China., Huo N; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China., Gao W; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China., Luo D; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, PR China., Li J; Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China. gaowei317040@m.scnu.edu.cn.; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China.; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
Publikováno v:
Nanoscale [Nanoscale] 2022 Oct 13; Vol. 14 (39), pp. 14603-14612. Date of Electronic Publication: 2022 Oct 13.