Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Justin Norman"'
Autor:
Hon Ki Tsang, Justin Norman, Daehwan Jung, Songtao Liu, Michael Kennedy, Arthur C. Gossard, Xinru Wu, John E. Bowers
Publikováno v:
OFC
A 20-GHz passively mode-locked quantum dot laser directly grown on a silicon substrate is demonstrated as an on-chip wavelength division multiplexing (WDM) source for 4.1 Tb/s data transmission using 64 Nyquist WDM channels.
Publikováno v:
OFC
We report, for the first time, a low noise high-channel-count 20 GHz passively mode locked quantum dot laser grown on CMOS compatible on-axis (001) silicon substrate. The laser demonstrates a wide mode locking regime in the O-band. A record low timin
Publikováno v:
Conference on Lasers and Electro-Optics.
Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 8
Intensity and Phase Modulators at 1.55 μm with InAs/InGaAs Quantum Dots Epitaxially Grown on Silicon
Publikováno v:
CLEO Pacific Rim Conference.
InAs quantum dot core electro-optic modulators are fabricated on (100) silicon substrates opening up large-scale III-V photonic integration. Mach-Zehnder modulator with 8 mm long electrode has 2.2V $V \pi$ and less than 3 dB/cm propagation loss.
Autor:
Di Liang, Michael Kennedy, Daehwan Jung, Arthur C. Gossard, John E. Bowers, Justin Norman, Yating Wan, Chen Shang, Chong Zhang
Publikováno v:
Conference on Lasers and Electro-Optics.
We demonstrate the first integrated electrically pumped quantum dot micro-ring lasers epitaxially grown on (001) silicon. On-chip photodetection under continuous-wave excitation was achieved with a low threshold current of 3 mA.
Publikováno v:
Conference on Lasers and Electro-Optics.
We report the current and wavelength dependence of gain and transparency current for a variety of quantum dot laser structures. The dependence on number of quantum dot layers and templates for growth are reported.
Autor:
Justin Norman, Robert W. Herrick, Alfredo Torres, Catherine Jan, Yating Wan, Arthur C. Gossard, John E. Bowers, Daehwan Jung, Neil Caranto
Publikováno v:
Conference on Lasers and Electro-Optics.
InAs quantum dot Fabry-Perot lasers grown on on-axis (001) Si demonstrate record-low continuous-wave threshold current of 4.8 mA as well as excellent device reliability with extrapolated lifetimes more than ten million hours at 35 °C.
Autor:
Daehwan Jung, Yating Wan, Justin Norman, John E. Bowers, Kaiyin Feng, Alp Dagli, Arthur C. Gossard
Publikováno v:
Conference on Lasers and Electro-Optics.
A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidew
Autor:
Chen Shang, Daehwan Jung, Robert W. Herrick, Arthur C. Gossard, Justin Norman, John E. Bowers, Catherine Jan, Michael Kennedy
Publikováno v:
OFC
We report 1.3 μm quantum dot lasers monolithically integrated on Si substrate. A threshold current of 6.2 mA, output power of 185 mW, and excellent device lifetimes of more than a million hours were achieved.
Publikováno v:
Frontiers in Optics 2017.
We report for the first time electro-optic phase and amplitude modulators in GaAs/AlGaAs epitaxial layers grown on Si substrates. Intensity modulators with 4-mm long electrodes have Vπ of 3.59V corresponding to 1.44 V-cm modulation efficiency.