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Publikováno v:
Enciso, M. ; Aniel, F. ; Giguerre, L. ; Crozat, P. ; Adde, R. (2001) High frequency properties of Si/SiGe n-MODFETs: dependence on gate length and temparture. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
The HF performances of n-type strained Si channel Modulation Doped Field Effect Transistors (MODFETs) with 0.118 µm, 0.130 µm and 0.250 µm gate lengths are reported at 300 K and 50 K. At 300K, intrinsic cut-off frequencies fTi are 65 GHz, 58 GHz,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33f0f1c6eab0339d77605b7bcb16d470
http://amsacta.unibo.it/81/
http://amsacta.unibo.it/81/