Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Ziyang Liu"'
Autor:
Yan Wang, Mingguang Yao, Xing Hua, Fei Jin, Zhen Yao, Hua Yang, Ziyang Liu, Quanjun Li, Ran Liu, Bo Liu, Linhai Jiang, Bingbing Liu
Publikováno v:
Chinese Physics Letters. 39:056101
The hybridization of fullerene and nanotube structures in newly isolated C90 with the D 5h symmetric group (D 5h (1)-C90) provides an ideal model as a mediating allotrope of nanocarbon from zero-dimensional (0D) fullerene to one-dimensional nanotube.
Publikováno v:
Journal of Physics: Conference Series. 1449:012039
In the case of deep peak shaving of thermal power units, it can absorb more photovoltaics and wind power, and also reduce the efficiency of thermal power plants and increase the environmental cost of society. This paper analyses the thermal power uni
Publikováno v:
Journal of Physics: Conference Series. 1087:042007
Publikováno v:
Journal of Micromechanics and Microengineering. 27:115012
Ultrasonic bonding is a commonly-used method for fabrication of thermoplastic microfluidic devices. However, due to the existence of the energy director (a convex structure to concentrate the ultrasonic energy), it is difficult to control its molten
Autor:
Kristof Dessein, J. De Boeck, Gustaaf Borghs, V. F. Motsnyi, Ziyang Liu, L. Lagae, Jo Das, H. Boeve, W. Van Roy
Publikováno v:
Semiconductor Science and Technology. 17:342-354
There has been an increased interest in the introduction of magnetic thin films into semiconductors. This interest is motivated by the benefit found in using the magnetic thin-film properties (giant or tunnelling magnetoresistance and hysteresis) in
Publikováno v:
Journal of Micromechanics and Microengineering. 27:017003
Publikováno v:
Nanotechnology. 27:174001
Materials with strong reducibility have been used as electron injection layers (EILs) to lower the work function of cathodes and reduce the driving voltage of organic light-emitting diodes (OLEDs). However, the most prominent electron injection mater
Publikováno v:
Chinese Physics B. 21:077103
An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width a
Autor:
Ziyang Liu, Yue Hao, Dang-Hui Wang, Jincheng Zhang, Zhiyu Lin, Juncai Ma, Teng Jiang, Wei Mao, Shengrui Xu, Xiao-Yong Xue
Publikováno v:
Chinese Physics Letters. 29:017803
Nonpolar (112?0) and semipolar (112?2) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs). Transmission electron microscopy reveals that the density of BSFs for the semipola
Publikováno v:
Journal of Physics: Conference Series; 2020, Vol. 1449 Issue 1, p1-1, 1p