Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Renchao Che"'
Autor:
Qingchen Cao, Yuyang Wu, Yunhao Zhao, Yingqiang Xu, Zhichuan Niu, Yi Shi, Yongsheng Liu, Xianhu Liu, Xuefeng Zhang, Renchao Che
Publikováno v:
Nanotechnology. 34:035203
In this paper, a strategy to finely modulate the energy band structure to control the carrier confinement capability of digital alloys (DA) is proposed. Strain analysis shows that As and Sb atoms are exchanged within the AlAsSb DA. The bottom of the
Autor:
Zhichuan Niu, Yingqiang Xu, Yunhao Zhao, Chenyuan Cai, Jin-Ming Shang, Fu-Hui Shao, Haiqiao Ni, Renchao Che, Yi Zhang, Xie Shengwen, Su Xiangbin
Publikováno v:
Chinese Physics B. 27:128105
Publikováno v:
Chinese Physics B. 26:104209
The growth of heterogeneous crystal has aroused a great deal of interest in recent years. In this study, KH2PO4 (KDP)/KTaO3 (KT) heterogeneous crystal is acquired based on the KT substrate. Here, we report the observation of the oriented layer-by-lay
Autor:
Kledi Xhaxhiu, Junjie Li, Changzhi Gu, Zongli Wang, Yang Huang, Renchao Che, Hans-Jörg Deiseroth, Xin Jiang
Publikováno v:
Nanotechnology. 19:205702
Quaternary mixed-valence compound TlIn(4)S(5)Cl micro- and nanowires are prepared by partial substitution of chalcogen with halogen starting from a stoichiometric mixture of TlCl, In and S. Their electrical conductivity and gas sensitivity properties
Publikováno v:
Nanotechnology; Feb2011, Vol. 22 Issue 7, p075702-075702, 1p
Autor:
Xin Jiang, Jörg Deiseroth, Changzhi Gu, Kledi Xhaxhiu, Yang Huang, Junjie Li, Renchao Che, Zongli Wang
Publikováno v:
Nanotechnology; May2008, Vol. 19 Issue 20, p05702-05702, 1p